scholarly journals Stretching magnetism with an electric field in a nitride semiconductor

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
D. Sztenkiel ◽  
M. Foltyn ◽  
G. P. Mazur ◽  
R. Adhikari ◽  
K. Kosiel ◽  
...  
Keyword(s):  
Electric Field ◽  
Nitride Semiconductor

Electric field emission from nitride semiconductor grown on Mo substrate

2003 ◽  
Vol 0 (7) ◽  
pp. 2416-2419 ◽  
Author(s):  
S. Nishida ◽  
T. Yamanaka ◽  
S. Hasegawa ◽  
H. Asahi
Keyword(s):  
Electric Field ◽  
Field Emission ◽  
Nitride Semiconductor

NONLINEAR OPTICAL RECTIFICATION OF A COUPLING WURTZITEGaN-BASED QUANTUM WELL WITH BUILT-IN ELECTRIC FIELDS

2007 ◽  
Vol 14 (01) ◽  
pp. 151-156 ◽  
Author(s):  
L. ZHANG
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Electric Fields ◽  
Field Model ◽  
Structural Parameters ◽  
Optical Rectification ◽  
Monotonic Functions ◽  
Compact Density ◽  
Nitride Semiconductor ◽  
Nonlinear Optical Rectification

Taking the strong built-in electric field into consideration, the optical-rectification (OR) coefficient in a nitride semiconductor coupling quantum well (CQW) has been theoretically investigated by using the compact density matrix approach. The electronic eigenstates in a nitride CQW are exactly solved based on the built-in electric field model already constituted in the recent reference. Numerical calculations on the typical GaN / InxGa1-xN CQW are performed. The calculated results reveal that the OR coefficients of the CQW are not monotonic functions of the well width, barrier width, and the doped concentration of the CQW systems but have complicated dependent relations on them. Our calculation shows that a strong OR effect can be obtained in the nitride CQW by choosing optimized structural parameters and a relatively low doped fraction.

Resolution in photoelectron microscopy

1991 ◽  
Vol 49 ◽  
pp. 458-459
Author(s):  
G. F. Rempfer
Keyword(s):  
Electron Microscopy ◽  
Electric Field ◽  
Ultraviolet Light ◽  
Uniform Field ◽  
Virtual Image ◽  
Lens System ◽  
Photoemission Electron Microscopy ◽  
Planar Electrode ◽  
Electron Lens ◽  
Photoemission Electron

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.

Field-assisted ionization theory for microscopists

1994 ◽  
Vol 52 ◽  
pp. 820-821
Author(s):  
Patrick P. Camus
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Ionization Probability ◽  
Critical Distance ◽  
Tunneling Probability ◽  
Field Ionization ◽  
Radius Of Curvature ◽  
Field Evaporation ◽  
A Value ◽  
Ion Emission

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).

Linear growth of instabilities on a liquid metal under normal electric field

1993 ◽  
Vol 3 (8) ◽  
pp. 1201-1225 ◽  
Author(s):  
G. N�ron de Surgy ◽  
J.-P. Chabrerie ◽  
O. Denoux ◽  
J.-E. Wesfreid
Keyword(s):  
Liquid Metal ◽  
Electric Field ◽  
Linear Growth ◽  
Normal Electric Field
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