scholarly journals Controlling thermal emission with refractory epsilon-near-zero metamaterials via topological transitions

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
P. N. Dyachenko ◽  
S. Molesky ◽  
A. Yu Petrov ◽  
M. Störmer ◽  
T. Krekeler ◽  
...  
Keyword(s):  
Thermal Emission ◽  
Topological Transitions ◽  
Epsilon Near Zero

Thermal Emission from Multi-mode Optical Antennas on an Epsilon-Near-Zero Substrate

2020 ◽  
Author(s):  
Irfan Khan ◽  
Owen Dominguez ◽  
Junchi Lu ◽  
Leland Nordin ◽  
Daniel Wasserman ◽  
...  
Keyword(s):  
Thermal Emission ◽  
Optical Antennas ◽  
Multi Mode ◽  
Epsilon Near Zero

scholarly journals Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

2014 ◽  
Vol 105 (13) ◽  
pp. 131109 ◽  
Author(s):  
Young Chul Jun ◽  
Ting S. Luk ◽  
A. Robert Ellis ◽  
John F. Klem ◽  
Igal Brener
Keyword(s):  
Thin Films ◽  
Thermal Emission ◽  
Plasmon Polaritons ◽  
Epsilon Near Zero

scholarly journals Manipulating thermal emission with spatially static fluctuating fields in arbitrarily shaped epsilon-near-zero bodies

2018 ◽  
Vol 115 (12) ◽  
pp. 2878-2883 ◽  
Author(s):  
Iñigo Liberal ◽  
Nader Engheta
Keyword(s):  
Thermal Emission ◽  
Spatial Coherence ◽  
The Body ◽  
Practical Implementation ◽  
Dielectric Particles ◽  
Resonant Emission ◽  
Nanophotonic Structures ◽  
Boundary Deformation ◽  
Static Character ◽  
Epsilon Near Zero

The control and manipulation of thermal fields is a key scientific and technological challenge, usually addressed with nanophotonic structures with a carefully designed geometry. Here, we theoretically investigate a different strategy based on epsilon-near-zero (ENZ) media. We demonstrate that thermal emission from ENZ bodies is characterized by the excitation of spatially static fluctuating fields, which can be resonantly enhanced with the addition of dielectric particles. The “spatially static” character of these temporally dynamic fields leads to enhanced spatial coherence on the surface of the body, resulting in directive thermal emission. By contrast with other approaches, this property is intrinsic to ENZ media and it is not tied to its geometry. This point is illustrated with effects such as geometry-invariant resonant emission, beamforming by boundary deformation, and independence with respect to the position of internal particles. We numerically investigate a practical implementation based on a silicon carbide body containing a germanium rod.

Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

1993 ◽  
Vol 51 ◽  
pp. 690-691
Author(s):  
W. T. Pike
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Thermal Emission ◽  
Lattice Parameter ◽  
Scanning Transmission Electron Microscope ◽  
Emission Source ◽  
Device Structure ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices

1997 ◽  
Author(s):  
S.-S. Lee ◽  
J.-S. Seo ◽  
N.-S. Cho ◽  
S. Daniel
Keyword(s):  
Thermal Emission ◽  
Test Cases ◽  
Memory Devices ◽  
Front Side ◽  
Emission Analysis ◽  
Intensity Attenuation ◽  
Analysis Techniques ◽  
Defect Sites ◽  
Emission Microscopy ◽  
Microscopy Techniques

Abstract Both photo- and thermal emission analysis techniques are used from the backside of the die colocate defect sites. The technique is important in that process and package technologies have made front-side analysis difficult or impossible. Several test cases are documented. Intensity attenuation through the bulk of the silicon does not compromise the usefulness of the technique in most cases.

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