scholarly journals Correction: Corrigendum: Elucidating the role of disorder and free-carrier recombination kinetics in CH3NH3PbI3 perovskite films

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Chan La-o-vorakiat ◽  
Teddy Salim ◽  
Jeannette Kadro ◽  
Mai-Thu Khuc ◽  
Reinhard Haselsberger ◽  
...  
Keyword(s):  
Free Carrier ◽  
Carrier Recombination ◽  
Recombination Kinetics

scholarly journals Modeling the Free Carrier Recombination Kinetics in PTB7:PCBM Organic Photovoltaics

2016 ◽  
Vol 120 (43) ◽  
pp. 24597-24604 ◽  
Author(s):  
Stefan D. Oosterhout ◽  
Andrew J. Ferguson ◽  
Bryon W. Larson ◽  
Dana C. Olson ◽  
Nikos Kopidakis
Keyword(s):  
Organic Photovoltaics ◽  
Free Carrier ◽  
Carrier Recombination ◽  
Recombination Kinetics

scholarly journals Microcharacterization of Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Phase Contrast ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Carrier Recombination ◽  
Roughening Transition ◽  
Semiconductor Heterostructure ◽  
Transmission Electron ◽  
Quantum Well Wire ◽  
Interfacial Strain

The atomic structure of semiconductor heterostructure interfaces and metalsemiconductor interfaces are best characterized by transmission electron microscopy (TEM). Both phase contrast TEM and structure factor contrast TEM are able to distinguish very small structural (two monolayers) or compositional (less than 0.2%) fluctuations at interfaces. Applications of these techniques to the study of the roughening transition temperature at the Gal−xAlxAs–GaAs and Ga1−xAlxAs–Ge interfaces grown by molecular beam epitaxy are presented. Minority carrier recombination at interfaces is characterized on a microscopic scale by low temperature cathodoluminescence. This technique is used to demonstrate the role of interfaces in gettering defects in Gal1−xAlxAs/GaAs heterostructures. Finally, the effects of interfacial strain in producing a localization of the luminescence in GaAs quantum well wire structures will be discussed.

Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond

2009 ◽  
Vol 80 (5) ◽  
Author(s):  
R. M. MacLeod ◽  
S. W. Murray ◽  
J. P. Goss ◽  
P. R. Briddon ◽  
R. J. Eyre
Keyword(s):  
High Temperatures ◽  
Free Carrier ◽  
Carrier Energy

Ultrafast Relaxation Character of Nonequilibrium Carriers in GaAs Excited by Femtosecond Laser

2006 ◽  
Vol 532-533 ◽  
pp. 572-575
Author(s):  
Ming Zhou ◽  
Dong Qing Yuan ◽  
Li Peng Liu ◽  
Hui Xia Liu ◽  
Nai Fei Ren
Keyword(s):  
Femtosecond Laser ◽  
Relaxation Curve ◽  
Refraction Index ◽  
Free Carrier ◽  
Index Of Refraction ◽  
Lattice Temperature ◽  
Pump Probe ◽  
Recombination Lifetime ◽  
Carrier Effect ◽  
Carrier Recombination

Experiment setup of femtosecond laser pump probe was established, the time resolution of time-delay setting reached 67fs. By use of femtosecond laser with width of 30fs and wavelength is 796nm the dependence of transient change of reflectivity on delayed time in GaAs was measured by pump-probe method. By calculating the change of complex index of refraction (%n), free-carrier effect, lattice-temperature and carrier recombination contributions to relaxation curve was analyzed. When the carrier density N is 1.44×1018/cm3, free-carrier contribution to refraction index %nFC is -7.33×10-4, lattice-temperature %nLT is 0.85×10-4. Based on recombination rate equation, recombination lifetime of 980ps was deduced.

Critical role of nanoinclusions in silver selenide nanocomposites as a promising room temperature thermoelectric material

2019 ◽  
Vol 7 (9) ◽  
pp. 2646-2652 ◽  
Author(s):  
Khak Ho Lim ◽  
Ka Wai Wong ◽  
Yu Liu ◽  
Yu Zhang ◽  
Doris Cadavid ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Room Temperature ◽  
Opposite Effect ◽  
Critical Role ◽  
Free Carrier ◽  
Silver Selenide ◽  
Band Bending ◽  
Seebeck Coefficients ◽  
Electrical Conductivities

The introduction of nonmetal nanoinclusions within Ag2Se results in an interphase band bending that promotes electron filtering and increase Seebeck coefficient. Similar loading of metal nanoinclusions provided an opposite effect-modulating free carrier concentration, as characterized by superior electrical conductivities and lower Seebeck coefficients.

The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Ultrafast Carrier ◽  
Scattering Time

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

Examining the Role of Free Carrier Concentration on the Phonon Lifetimes in GaN Using Raman Spectroscopy

2007 ◽  
Author(s):  
Thomas Beechem ◽  
Samuel Graham
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Performance ◽  
Uncertainty Relation ◽  
Free Carrier ◽  
Optical Phonons ◽  
Time Uncertainty ◽  
Longitudinal Phonon ◽  
Optical Modes ◽  
Carrier Interaction

The lifetimes of polar optical phonons are known to affect the electrical and thermal performance of gallium nitride (GaN) based devices. Utilizing the energy-time uncertainty relation, this study investigates these lifetimes using Raman spectroscopy for a series of samples having free carrier concentrations ranging from 1.24e18 to 3e17 cm−3. By measuring across the typical operating temperatures of these devices, the mechanisms responsible for scattering of 5 separate optical modes are elucidated. It is found that phonon-carrier interaction directly determines the lifetime of the polar optical A1(LO) mode while indirectly influencing the modes into which this longitudinal phonon decays, namely, E1 and A1(TO). Thus understanding the entire phonon energy cascade is vital both for management of the so called “hot phonon” effect as well as modeling of carrier-phonon interactions.

The influence of the mesoporous TiO2 scaffold on the performance of methyl ammonium lead iodide (MAPI) perovskite solar cells: charge injection, charge recombination and solar cell efficiency relationship

2015 ◽  
Vol 3 (44) ◽  
pp. 22154-22161 ◽  
Author(s):  
Alba Matas Adams ◽  
Jose Manuel Marin-Beloqui ◽  
Georgiana Stoica ◽  
Emilio Palomares
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Perovskite Solar Cells ◽  
Charge Recombination ◽  
Mesoporous Tio2 ◽  
Lead Iodide ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Carrier Recombination ◽  
Recombination Kinetics

This works shows the influence of the mesoporous TiO2 nature over the carrier recombination kinetics and the perovskite efficiency.

Important role of shallow impurities in carrier recombination in SiC

1995 ◽  
Vol 93 (5) ◽  
pp. 470
Author(s):  
W.M Chen ◽  
N.T Son ◽  
E Sörman ◽  
O Kordina ◽  
J.P Bergman ◽  
...  
Keyword(s):  
Carrier Recombination ◽  
Shallow Impurities
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