scholarly journals Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Woo Young Kim ◽  
Hyeon-Don Kim ◽  
Teun-Teun Kim ◽  
Hyun-Sung Park ◽  
Kanghee Lee ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Logic Gate ◽  
Reconfigurable Logic

Design of CNTFET-based reconfigurable logic gate

2007 ◽  
Vol 43 (9) ◽  
pp. 514 ◽  
Author(s):  
J. Liu ◽  
I. O'Connor ◽  
D. Navarro ◽  
F. Gaffiot
Keyword(s):  
Logic Gate ◽  
Reconfigurable Logic

scholarly journals A Reconfigurable Logic Cell Based on a Simple Dynamical System

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Lixiang Li ◽  
Chunyu Yang ◽  
Sili Hui ◽  
Wenwen Yu ◽  
Jürgen Kurths ◽  
...  
Keyword(s):  
Dynamical System ◽  
Logic Gate ◽  
Dynamic Logic ◽  
Logic Gates ◽  
Transformation Method ◽  
General Purpose ◽  
Reconfigurable Logic ◽  
Computer Chips ◽  
Threshold Mechanism ◽  
Logic Functions

This paper introduces a new scheme to achieve a dynamic logic gate which can be adjusted flexibly to obtain different logic functions by adjusting specific parameters of a dynamical system. Based on graphical tools and the threshold mechanism, the distribution of different logic gates is studied, and a transformation method between different logics is given. Analyzing the performance of the dynamical system in the presence of noise, we discover that it is resistant to system noise. Moreover, we find some part of the system can be considered as a leaky integrator which has been already widely applied in engineering. Finally, we provide a proof-of-principle hardware implementation of the proposed scheme to illustrate its effectiveness. With the proposed scheme in hand, it is convenient to build the flexible, robust, and general purpose computing devices such as various network coding routers, communication encoders or decoders, and reconfigurable computer chips.

NONVOLATILE SPINTRONICS: PERSPECTIVES ON INSTANT-ON NONVOLATILE NANOELECTRONIC SYSTEMS

SPIN ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1250009 ◽  
Author(s):  
K. L. WANG ◽  
P. KHALILI AMIRI
Keyword(s):  
Energy Dissipation ◽  
Nonvolatile Memory ◽  
High Speed ◽  
Logic Gate ◽  
Random Access ◽  
Spin Transfer Torque ◽  
Magnetic Memory ◽  
New Paradigm ◽  
Cmos Scaling ◽  
Switching Energy

Instant-on nonvolatile electronics, which can be powered on/off instantaneously without the loss of information, represents a new and emerging paradigm in electronics. Nonvolatile circuits consisting of volatile CMOS, combined with nonvolatile nanoscale magnetic memory, can make electronics nonvolatile at the gate, circuit and system levels. When high speed magnetic memory is embedded in CMOS logic circuits, it may help resolve the two major challenges faced in continuing CMOS scaling: Power dissipation and variability of devices. We will give a brief overview of the current challenges of CMOS in terms of energy dissipation and variability. Then, we describe emerging nonvolatile memory (NVM) options, particularly those spintronic solutions such as magnetoresistive random access memory (MRAM) based on spin transfer torque (STT) and voltage-controlled magnetoelectric (ME) write mechanisms. We will then discuss the use of STT memory for embedded application, e.g., replacing volatile CMOS Static RAM (SRAM), followed by discussion of integration of CMOS reconfigurable circuits with STT-RAM. We will then present the scaling limits of the STT memory and discuss its critical performance parameters, particularly related to switching energy. To further reduce the switching energy, we present the concept of electric field control of magnetism, and discuss approaches to realize this new mechanism in realizing low switching energy, allowing for implementation of nonvolatility at the logic gate level, and eventually at the transistor level with a magnetoelectric gate (MeGate). For nonvolatile logic (NVL), we present and discuss as an example an approach using interference of spin waves, which will have NVL operations remembering the state of computation. Finally, we will discuss the potential impact and implications of this new paradigm on low energy dissipation instant-on nonvolatile systems.

GENERAL SPICE MODELS FOR MEMRISTOR AND APPLICATION TO CIRCUIT SIMULATION OF MEMRISTOR-BASED SYNAPSES AND MEMORY CELLS

2010 ◽  
Vol 19 (02) ◽  
pp. 407-424 ◽  
Author(s):  
MOHAMMAD JAVAD SHARIFI ◽  
YASSER MOHAMMADI BANADAKI
Keyword(s):  
Nonvolatile Memory ◽  
Circuit Simulation ◽  
Logic Gate ◽  
Memory Cell ◽  
Model Parameters ◽  
Programmable Logic ◽  
Circuit Element ◽  
Hewlett Packard ◽  
Gate Circuit ◽  
First Time

Memristor had been first theorized nearly 40 years ago by Prof. Chua, as the fourth fundamental circuit element beside the three existing elements (Resistor, Capacitor and Inductor) but because no one has succeeded in building a memristor, it has long remained a theoretical element. Some months ago, Hewlett-Packard (hp) announced it created a memristor using a TiO2/TiO2-X structure. In this paper, the characteristics, structures and relations for the invented hp's memristor are briefly reviewed and then two general SPICE models for the charge-controlled and flux-controlled memristors are introduced for the first time. By adjusting the model parameters to the hp's memristor characteristics some circuit properties of the device are studied and then two important memristor applications as the memory cell in a nonvolatile-RAM structure and as the synapse in an artificial neural network are studied. By utilizing the introduced models and designing the appropriate circuits for two most important applications; a nonvolatile memory structure and a programmable logic gate, circuit simulations are done and the results are presented.

Reconfigurable Logic Gate of Quantum-Flux-Parametron Using Magnetic Material

2015 ◽  
Author(s):  
Sota Kurokawa ◽  
Akihisa Tsune ◽  
Hiroshi Ito ◽  
Soya Taniguchi ◽  
Kota Ishikawa ◽  
...  
Keyword(s):  
Magnetic Material ◽  
Logic Gate ◽  
Reconfigurable Logic ◽  
Quantum Flux
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