scholarly journals Intrinsically low thermal conductivity from a quasi-one-dimensional crystal structure and enhanced electrical conductivity network via Pb doping in SbCrSe3

2017 ◽  
Vol 9 (6) ◽  
pp. e387-e387 ◽  
Author(s):  
Dingfeng Yang ◽  
Wei Yao ◽  
Yanci Yan ◽  
Wujie Qiu ◽  
Lijie Guo ◽  
...  
2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yaqiong Zhong ◽  
Yong Luo ◽  
Xie Li ◽  
Jiaolin Cui

AbstractAgInTe2 compound has not received enough recognition in thermoelectrics, possibly due to the fact that the presence of Te vacancy (VTe) and antisite defect of In at Ag site (InAg) degrades its electrical conductivity. In this work, we prepared the Ag1-xInTe2 compounds with substoichiometric amounts of Ag and observed an ultralow lattice thermal conductivity (κL = 0.1 Wm−1K−1) for the sample at x = 0.15 and 814 K. This leads to more than 2-fold enhancement in the ZT value (ZT = 0.62) compared to the pristine AgInTe2. In addition, we have traced the origin of the untralow κL using the Callaway model. The results attained in this work suggest that the engineering of the silver vacancy (VAg) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe2, realized by the increased point defects and modified crystal structure distortion as the VAg concentration increases.


2005 ◽  
Vol 128 (4) ◽  
pp. 397-404 ◽  
Author(s):  
A. D. Sommers ◽  
A. M. Jacobi

The fin efficiency of a high-thermal-conductivity substrate coated with a low-thermal-conductivity layer is considered, and an analytical solution is presented and compared to alternative approaches for calculating fin efficiency. This model is appropriate for frost formation on a round-tube-and-fin metallic heat exchanger, and the problem can be cast as conduction in a composite two-dimensional circular cylinder on a one-dimensional radial fin. The analytical solution gives rise to an eigenvalue problem with an unusual orthogonality condition. A one-term approximation to this new analytical solution provides fin efficiency calculations of engineering accuracy for a range of conditions, including most frosted-coated metal fins. The series solution and the one-term approximation are of sufficient generality to be useful for other cases of a low-thermal-conductivity coating on a high-thermal-conductivity substrate.


2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Hamadi Hamza ◽  
Mohamed Faouzi Zid ◽  
Ahmed Driss

LiNa5K3Mo11As3O45 is a new inorganic compound. It was synthesized by a solid state method. The crystal structure has been studied by single crystal X-ray analysis. The R-values reached 2.8%. The title compound crystallizes in the triclinic system, space group P-1, with a = 10.550 (2) Å, b = 11.723 (2) Å, c = 17.469 (3) Å, α = 102.35 (3)°, β = 87.61 (2)°, and γ = 111.03 (3)°. The anionic unit [Mo11As3O45]9− is formed by nine MoO6 octahedra, two MoO5 trigonal bipyramids, and three AsO4 tetrahedra. The association of [Mo11As3O45]9− units, running along [010], leads to a one-dimensional framework. Li, K, and Na are located in the space surrounding the anionic ribbons. This material was characterized by SEM microscopy, IR spectroscopy, and powder X-ray diffraction. The electrical conductivity was investigated from 528 K to 673 K by impedance complex followed by DSC spectroscopy.


2000 ◽  
Vol 626 ◽  
Author(s):  
M. Fornari ◽  
D. J. Singh ◽  
I. I. Mazin ◽  
J. L. Feldman

ABSTRACTThe key challenges in discovering new high ZT thermoelectrics are understanding how the nearly contradictory requirements of high electrical conductivity, high thermopower and low thermal conductivity can be achieved in a single material and based on this identifying suitable compounds. First principles calculations provide a material specific microscopic window into the relevant properties and their origins. We illustrate the utility of the approach by presenting specific examples of compounds belonging to the class of skutterudites that are or are not good thermoelectrics along with the microscopic reasons. Based on our computational exploration we make a suggestion for achieving higher values of ZT at room temperature in bulk materials, namely n-type La(Ru,Rh)4Sb12 with high La-filling.


2020 ◽  
Vol 63 (9) ◽  
pp. 1759-1768 ◽  
Author(s):  
Dongyang Wang ◽  
Zhiwei Huang ◽  
Yang Zhang ◽  
Lijie Hao ◽  
Guangtao Wang ◽  
...  

2015 ◽  
Vol 3 (38) ◽  
pp. 9811-9818 ◽  
Author(s):  
Jian Wang ◽  
Kathleen Lee ◽  
Kirill Kovnir

Two new antimony selenides crystallizing in new structure types, Ba2Sb2Se5and Ba6Sb7Se16.11, were synthesized and characterized. The structural complexity and disorder in the Se sublattice of Ba2Sb2Se5resulted in extremely low thermal conductivity.


2017 ◽  
Vol 5 (36) ◽  
pp. 9421-9428 ◽  
Author(s):  
Xu Chen ◽  
Zhiqiang Li ◽  
Hongbing Zhu ◽  
Ying Wang ◽  
Baolai Liang ◽  
...  

An antimony sulfide (Sb2S3) semiconductor is appealing as a promising light absorber due to its suitable bandgap (1.5–1.7 eV), ‘one dimensional’ crystal structure and non-toxic constituents.


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