Phonon scattering at grain boundaries in heavily doped fine-grained silicon–germanium alloys

Nature ◽  
1981 ◽  
Vol 290 (5809) ◽  
pp. 765-766 ◽  
Author(s):  
D. M. Rowe ◽  
V. S. Shukla ◽  
N. Savvides
Keyword(s):  
Grain Boundaries ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Fine Grained ◽  
Heavily Doped ◽  
Silicon Germanium Alloys

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation

2013 ◽  
Vol 16 (6) ◽  
pp. 1655-1658 ◽  
Author(s):  
A. Belafhaili ◽  
L. Laânab ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
A. Claverie
Keyword(s):  
Ion Implantation ◽  
Silicon Germanium ◽  
Germanium Content ◽  
Silicon Germanium Alloys

Femtosecond spectroscopy in amorphous silicon and silicon-germanium alloys

1987 ◽  
Vol 97-98 ◽  
pp. 145-148 ◽  
Author(s):  
P.M. Fauchet ◽  
D. Hulin ◽  
A. Migus ◽  
A. Antonetti ◽  
J.P. Conde ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Femtosecond Spectroscopy ◽  
Silicon Germanium Alloys
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