Electron Spin Resonance Investigations of Ultra-violet and X-irradiated Methionine

Nature ◽  
1964 ◽  
Vol 202 (4929) ◽  
pp. 289-290 ◽  
Author(s):  
H. MÖNIG ◽  
R. KOCH
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Spin Resonance

Embedment of Methylene Blue in natural and synthetic phillipsite

Clay Minerals ◽  
2015 ◽  
Vol 50 (1) ◽  
pp. 23-30 ◽  
Author(s):  
Stanisław Kowalak ◽  
Małgorzata Szyld ◽  
Aldona Jankowska ◽  
Alina Zalewska ◽  
Abner Colella ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Paramagnetic Species ◽  
Natural Zeolites ◽  
Narrow Channels ◽  
Spin Resonance ◽  
Natural And Synthetic

AbstractPhillipsite was crystallized from a high siliceous aluminosilicate mixture containing Zn cations and methylene blue (MB). The presence of MB did not affect the crystallization, but it resulted in a substantial amount of dye being anchored to the zeolite, despite its narrow channels. Dye-free synthetic phillipsite modified with MB solution showed markedly lower dye content, which, however was considerably higher than those in the MB-treated natural phillipsite and mordenite. The ultra violet/visible (UV-vis) spectra of the dye-modified synthetic phillipsites indicated the presence of MB monomers and oligomers, whereas the spectra of the modified natural zeolites showed protonated MB also. The electron spin resonance spectra of samples crystallized with MB indicated the presence of paramagnetic species.

Electron Induced Depassivation Of H And D Terminated Si/Si02 Interfaces

1996 ◽  
Vol 446 ◽  
Author(s):  
R. A. B. Devine ◽  
W. L. Warren ◽  
K. Vanheusden ◽  
C. Mourrain ◽  
M‐J. Bouzid
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Electron Injection ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Hot Electron ◽  
Electrical Measurements ◽  
Hot Electron Injection ◽  
Spin Resonance

AbstractWe have performed electron spin resonance and electrical measurements on SiO2/Si structures subjected to anneals in 5% H2/N2 or 5% D2/N2 gases and subsequently injected with electrons using corona ions and ultra‐violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 μm metal‐oxide‐semiconductor transistors subjected to 400 °C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO2/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on Pb, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable us to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements we have made, the transistor ageing resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behaviour between the SiO2/Si structures and the 0.25 μm transistors are suggested.

Electron Spin Resonance and Ultra Violet (UV) Photoluminescence of Ge Implanted CuGaSe2 Thin Films Prepared by the CCSVT (Chemical Close-spaced Vapor Transport) Technique

2007 ◽  
Vol 1012 ◽  
Author(s):  
Serge Doka ◽  
Jasmin Hofstetter ◽  
Marin Rusu ◽  
Ernest Arushanov ◽  
Lips Klaus ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Ultra Violet ◽  
Vapor Transport ◽  
Polycrystalline Thin Film ◽  
Spin Resonance ◽  
Deep Donor ◽  
Donor States ◽  
P Type ◽  
Peak Emission

AbstractNon-equilibrium ion implantation of Ge in p-type polycrystalline thin film CuGaSe2 (CGSe) prepared by Chemical Close-spaced Vapor Transport (CCSVT) has been performed with the goal to achieve n-type doping of this chalcopyrite semiconductor. Using Electron Spin Resonance (ESR) it is shown that Ge implantation induces a paramagnetic specie at g = 2.003. A model is proposed that assigns the ESR signal to electrons trapped by donor states that are electrically inactive. Moreover, UV photoluminescence of Ge implanted films has evidenced a new peak emission at 1.47 eV, which is resolved as a radiative recombination of a hole bound to the native copper vacancy and an electron bound to a deep donor with an ionization energy of ED =360±10 meV.

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