Chemical Etching Studies and Transmission Electron Microscopy of Silicon Carbide

Nature ◽  
1963 ◽  
Vol 199 (4898) ◽  
pp. 1054-1056 ◽  
Author(s):  
T. GABOR ◽  
R. STICKLER
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Chemical Etching ◽  
Transmission Electron

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

2012 ◽  
Vol 23 (4) ◽  
pp. 045302 ◽  
Author(s):  
Monica Bollani ◽  
Daniel Chrastina ◽  
Valeria Montuori ◽  
Daniela Terziotti ◽  
Emiliano Bonera ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Etching ◽  
Transmission Electron

IDENTIFY OF THE MICRO-DEFECTS IN SEMI-INSULATING GaAs

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4484-4486
Author(s):  
YUESHENG XU ◽  
CHUNLING ZHANG ◽  
LEI TANG ◽  
CAICHI LIU ◽  
JINGCHEN HAO
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gallium Arsenide ◽  
Strong Interaction ◽  
Chemical Etching ◽  
Experimental Results ◽  
Transmission Electron ◽  
Koh Etching ◽  
Scanning Electron

The micro-defects in semi-insulating gallium arsenide (SI-GaAs) were investigated by means of chemical etching (ultrasonic aided Abtahams-Buiocchi etching, melting KOH etching), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The experimental results showed that the micro-defects in SI-GaAs are micro-precipitates of As with the size of microns. Micro-defects and dislocations have strong interaction, dislocations absorb the micro-defects and micro-defects decorate on the dislocations.

scholarly journals Влияние термообработки на свойства композитных кремний-углеродных анодов для литий-ионных аккумуляторов

2020 ◽  
Vol 46 (3) ◽  
pp. 14
Author(s):  
Е.В. Астрова ◽  
А.В. Парфеньева ◽  
А.М. Румянцев ◽  
В.П. Улин ◽  
М.В. Байдакова ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Lithium Alloys

The effect of annealing temperature in argon atmosphere on the ability of Si-C nanocomposites to reversibly insert lithium was investigated. It was found that the higher the annealing temperature during the formation of the composite, the lower is the capacitance of the electrode made from it. X-ray diffraction analysis and transmission electron microscopy reveal that the reason of the capacitance decrease is formation at T  1100°C of silicon carbide of cubic modification -SiC, inactive with respect to the formation of lithium alloys or intercalates.

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