Preparation of Lower Oxide of Sulphur

Nature ◽  
1962 ◽  
Vol 193 (4817) ◽  
pp. 773-774 ◽  
Author(s):  
A. R. VASUDEVA MURTHY
Keyword(s):  
Lower Oxide

LOWER OXIDE OF TITANIUM IN SLAG

1932 ◽  
Vol 18 (6) ◽  
pp. 539-547
Author(s):  
Fujio Kakiuchi
Keyword(s):  
Lower Oxide

Hydridic Nature of the "Lower Oxide of Thorium"

1962 ◽  
Vol 1 (4) ◽  
pp. 963-964 ◽  
Author(s):  
Leonard I. Katzin ◽  
Louis Kaplan ◽  
Thomas Steitz
Keyword(s):  
Lower Oxide

Diagramme de phases du système K–K2O et le monooxyde de potassium K2O

1970 ◽  
Vol 48 (13) ◽  
pp. 1955-1958 ◽  
Author(s):  
F. Natola ◽  
Ph. Touzain
Keyword(s):  
Thermal Analysis ◽  
Phase Diagram ◽  
Differential Thermal Analysis ◽  
Melting Temperature ◽  
Lower Oxide ◽  
Reversible Transitions

Le diagramme de fusion du système K–K2O est obtenu par la technique de l'analyse thermique différentielle. La fusion du monooxyde de potassium K2O se manifeste à 646 + 5 °C. Des transformations cristallines réversibles de l'oxyde sont observées à 317, 372 et 446 °C. La dismutation de l'oxyde en peroxyde et métal apparait à une température approximativement égale à celle de la dernière des transitions. Le diagramme K–K2O comporte un eutectique à une température très proche de la température de fusion du potassium et une monotectie à 600 °C (concentration monotectique: 30.5 % atomique d'oxygène). Aucune existence de sous-oxyde n'est démontrée.The potassium–oxygen phase diagram has been determined up to the composition of K2O by the technique of differential thermal analysis. Potassium monoxide K2O melts at 646 ± 5 °C. Reversible transitions occur in solid K2O at 317, 372, and 446 °C. Disproportion of the monoxide into the peroxide and metal occurs at a temperature identical or very near to that of the last transition. The K–K2O eutectic melts at a temperature very close to the melting temperature of pure K (degenerate eutectic) and the monotectic at 600 °C (monotectic concentration: 30.5 oxygen atomic %). No evidence has been obtained that would indicate the existence of a lower oxide.

The Interpretation of Marker Experiment Conducted during Formation of Higher Oxide on the Surface of Lower Oxide

2015 ◽  
Vol 364 ◽  
pp. 71-79 ◽  
Author(s):  
Zbigniew Grzesik ◽  
Grzegorz Smola ◽  
Stanisław Mrowec
Keyword(s):  
Chemical Reactions ◽  
Defect Structure ◽  
Specific Treatment ◽  
Deposition Process ◽  
Transport Processes ◽  
The Other ◽  
Crystalline Lattice ◽  
Experimental Procedure ◽  
Lattice Disorder ◽  
Lower Oxide

The marker method in studying the formation mechanism and defect structure of higher oxide during oxidation of lower oxide has been discussed. The approach to this problem needs specific treatment, both in experimental procedure and in the interpretation of results. It has been shown that the correct results of marker experiments in the case of highly defected substrates can be obtained, if these substrates before the marker deposition process are submitted to homogenization under highest oxidant activity, at which they remain stable at a given temperature. In addition, the nonstoichiometry must be considered in formulating appropriate chemical reactions, being the basis for foreseeing the location of markers in the interior of reaction product. The other very important problem consists in the possibility of the formation of reaction product not only on the surface of oxidized substrate but also inside of this substrate. In such a situation, the formulation of final conclusions concerning the crystalline lattice disorder from marker position should be combined with considerations of chemical reactions and transport processes occurring in a given substrate.

Dimensional Effect on DIBL in Silicon Nanowire Transistors

2012 ◽  
Vol 626 ◽  
pp. 190-194
Author(s):  
Yasir Hashim ◽  
Othman Sidek
Keyword(s):  
Silicon Nanowire ◽  
Oxide Thickness ◽  
Simulation Tool ◽  
Dimensional Effect ◽  
Nanowire Transistors ◽  
Transfer Characteristics ◽  
Lower Oxide ◽  
Different Dimensions

Drain-induced barrier lowering (DIBL) is crucial in many applications of silicon nanowire transistors. This paper determined the effect of the dimensions of nanowires on DIBL. The MuGFET simulation tool was used to investigate the characteristics of the transistors. The transfer characteristics of transistors with different dimensions were simulated. The results show that longer nanowires with smaller diameters and lower oxide thickness decrease DIBL and tend to possess the best transistor characteristics.

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