Thermo-electric Effect and the Supra-conducting State

Makinson’s extension of Wilson’s treatment of the second-order effects in metals is used to derive an expression for the contribution of the lattice current to the thermo-electric power of metals at those temperatures where electron-phonon scattering predominates. It is found that in this temperature region one may expect the thermo-electric effect to show a sign opposite to the one which follows from the simple electron theory of metals. This is because the term due to the departure from equilibrium of the lattice distribution is larger than the usual term and is of opposite sign. If the temperature is greatly decreased or increased, the usual term predominates. The effect discussed may have a bearing on the behaviour of the thermo-electric power of the alkali metals, although it cannot explain this behaviour completely.

Download Full-text

A Study of Bismuth Induced Levels in CZT Using TEES/TSC

MRS Proceedings ◽

10.1557/proc-1164-l10-02 ◽

2009 ◽

Vol 1164 ◽

Author(s):

Raji Soundararajan ◽

Kelly A. Jones ◽

Santosh Swain ◽

Kelvin Lynn

Keyword(s):

Cross Section ◽

Ionization Energy ◽

Radiation Detector ◽

Radiation Detectors ◽

Thermal Ionization ◽

Thermo Electric ◽

High Electrical Resistivity ◽

Deep Donor ◽

Defect Levels ◽

Electric Effect

AbstractConsidering the desirable effects of doping CdTe with heavy elements like Bi, we have grown a Cadmium Zinc Telluride (Zn=10%) ingot with Bi (doping levels ∼1014 to 1015 at/cm3) as the heavy element dopant for use as a room temperature radiation detector, using the Bridgman method. In-spite of a high bulk resitivity (∼1010?cm), and the ability to hold high electric field (>2000 V/cm), these lightly doped crystals had a poor spectral resolution for the Co-57 photo peaks and ??e measurements were so low that these measurement were not reliable. Thermo electric effect spectroscopy (TEES) and thermally stimulated current (TSC) experiments on samples C and F (single crystals close to the tip and the heel of the ingot respectively) have revealed various defect levels in the band gap. Among these defect levels, we have identified and characterized two Bi-related deep levels namely a deep donor level L5 (thermal ionization energy: 0.33[5] to 0.39[5] eV and trap cross-section: 7.1[5] × 10-17 to 2.54 [5] × 10-16 cm2), and a deep acceptor level L8 (thermal ionization energy of 0.82 [5] eV and trap cross-section of 2.59 [5] × 10-12 cm2). These levels were responsible for the observed high electrical resistivity (∼1010 ?*cm) in the CdZnTe samples. From a comparison to studies on Bi doped CdTe samples, level L8 was tentatively associated with the (0/-) transition of (BiCd- - OTe) complex, however is still under study. Since these defect levels also act as trapping centers for charge carriers, in spite of the semi-insulating behavior the samples are poor radiation detectors.

Download Full-text