Effect of Atmospheric Pressure on the Frequency of a Tuning-fork

Nature ◽  
1929 ◽  
Vol 124 (3127) ◽  
pp. 511-511
Author(s):  
Y. NAMBA
Keyword(s):  
Atmospheric Pressure ◽  
Tuning Fork

A novel tuning fork gyroscope with high Q-factors working at atmospheric pressure

2005 ◽  
Vol 11 (2-3) ◽  
pp. 111-116 ◽  
Author(s):  
Y. Chen ◽  
J. Jiao ◽  
B. Xiong ◽  
L. Che ◽  
X. Li ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Tuning Fork ◽  
High Q ◽  
Q Factors

A Lateral-Axis Microelectromechanical Tuning-Fork Gyroscope With Decoupled Comb Drive Operating at Atmospheric Pressure

2010 ◽  
Vol 19 (3) ◽  
pp. 458-468 ◽  
Author(s):  
Zhong Yang Guo ◽  
Long Tao Lin ◽  
Qian Cheng Zhao ◽  
Zhen Chuan Yang ◽  
Huikai Xie ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Tuning Fork ◽  
Comb Drive ◽  
Lateral Axis

scholarly journals Analysis of Frequency Response and Scale-Factor of Tuning Fork Micro-Gyroscope Operating at Atmospheric Pressure

Sensors ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 2453-2472 ◽  
Author(s):  
Xukai Ding ◽  
Hongsheng Li ◽  
Yunfang Ni ◽  
Pengcheng Sang
Keyword(s):  
Frequency Response ◽  
Atmospheric Pressure ◽  
Tuning Fork ◽  
Scale Factor

scholarly journals Quartz Enhanced Photoacoustic Spectroscopy Based Gas Sensor with a Custom Quartz Tuning Fork

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 735
Author(s):  
Maxime Duquesnoy ◽  
Guillaume Aoust ◽  
Jean-Michel Melkonian ◽  
Raphaël Lévy ◽  
Myriam Raybaut ◽  
...  
Keyword(s):  
Quality Factor ◽  
Penetration Depth ◽  
Gas Sensor ◽  
Photoacoustic Spectroscopy ◽  
Atmospheric Pressure ◽  
Tuning Fork ◽  
Quartz Tuning Fork ◽  
Atmospheric Conditions ◽  
Co2 Detection ◽  
Inner Diameter

We have fabricated a custom quartz tuning fork (QTF) with a reduced fundamental frequency, a larger gap between the prongs and the best quality factor in air at atmospheric conditions ever reported. Acoustic microresonators have been added to the QTF, these were optimized through experiments. We demonstrate a normalized noise equivalent absorption of 3.7 × 10−9 W·cm−1·Hz−1/2 for CO2 detection at atmospheric pressure. Influence of the inner diameter and length of the microresonators has been studied as well as the penetration depth between the QTF prongs.

scholarly journals Quartz Enhanced Photoacoustic Spectroscopy Based on a Custom Quartz Tuning Fork

Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1362 ◽  
Author(s):  
Maxime Duquesnoy ◽  
Guillaume Aoust ◽  
Jean-Michel Melkonian ◽  
Raphaël Lévy ◽  
Myriam Raybaut ◽  
...  
Keyword(s):  
Quality Factor ◽  
Penetration Depth ◽  
Photoacoustic Spectroscopy ◽  
Atmospheric Pressure ◽  
Tuning Fork ◽  
Quartz Tuning Fork ◽  
Allan Deviation ◽  
Atmospheric Conditions ◽  
Co2 Detection ◽  
Inner Diameter

We have designed and fabricated a custom quartz tuning fork (QTF) with a reduced fundamental frequency; a larger gap between the prongs; and the best quality factor in air at atmospheric conditions ever reported, to our knowledge. Acoustic microresonators have been added to the QTF in order to enhance the sensor sensitivity. We demonstrate a normalized noise equivalent absorption (NNEA) of 3.7 × 10−9 W.cm−1.Hz−1/2 for CO2 detection at atmospheric pressure. The influence of the inner diameter and length of the microresonators has been studied, as well as the penetration depth between the QTF’s prongs. We investigated the acoustic isolation of our system and measured the Allan deviation of the sensor.

Structure Design of a Novel Micromachinined Tuning Fork Gyroscope with High Robustness

2012 ◽  
Vol 503 ◽  
pp. 108-113
Author(s):  
W.P. Chen ◽  
Yi Bo Yang ◽  
Y. Yu
Keyword(s):  
Atmospheric Pressure ◽  
Tuning Fork ◽  
Angular Rate ◽  
Structure Design ◽  
Framework Structure ◽  
Mechanical Coupling ◽  
Vibratory Gyroscope ◽  
Air Damping ◽  
Capacitor Structure ◽  
Silicon Based

A novel silicon based dual-mass vibrating tuning fork vibratory gyroscope (TFG) with differential capacitor structure is designed in this paper. the U-shaped beam is adapted to connecting the two decoupling movement of the framework structure in order to achieve the independent of the movement of drive direction and sense direction. The TFG structure is also optimized to further reduce the mechanical coupling of the device. The drive combs are designed on the mass, while the sense combs are designed on the frame. All the combs in this gyroscope are dominated by slide-film air damping in order to lower the air damping. This gyroscope is designed to obtain robust operation against variations under atmospheric pressure condition. The TFG is tested at atmospheric pressure with a sensitivity of 17.8mV/◦/s and a linearity of 99.989%, capacitance structure sensitivity is 21.5αf/◦/s with an equivalent noise angular rate of 0.028◦/s/Hz1/2, respective.

A High-Voltage Terminal for a Field-Emission Gun

1972 ◽  
Vol 30 ◽  
pp. 428-429
Author(s):  
N. F. Ziegler
Keyword(s):  
Field Emission ◽  
High Voltage ◽  
Atmospheric Pressure ◽  
Power Supplies ◽  
High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Sign in / Sign up

Export Citation Format

Share Document