Physics‐Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT

Radio Science ◽  
2019 ◽  
Vol 54 (10) ◽  
pp. 904-909
Author(s):  
Gunjan Rastogi ◽  
R. K. Kaneriya ◽  
Santanu Sinha ◽  
R. B. Upadhyay ◽  
A. N. Bhattacharya
Keyword(s):  
Contact Resistance ◽  
Gan Hemt ◽  
Physics Based Simulation ◽  
The Impact

The impact of different proportions of knitting elements on the resistive properties of conductive fabrics

2018 ◽  
Vol 89 (5) ◽  
pp. 881-890 ◽  
Author(s):  
Su Liu ◽  
Yanping Liu ◽  
Li Li
Keyword(s):  
Contact Resistance ◽  
Reference Source ◽  
Wearable Electronics ◽  
Electronic Textiles ◽  
Knitted Fabrics ◽  
Conductive Yarns ◽  
Key Factor ◽  
Resistive Networks ◽  
The Impact ◽  
Resistive Property

Conductive yarn is the key factor in fabricating electronic textiles. Generally, three basic fabric production methods (knit, woven, and non-woven) combined with two finishing processes (embroidery and print) are adopted to embed conductive yarns into fabrics to achieve flexible electronic textiles. Conductive yarns with knit structure are the most flexible and effective form of electronic textiles. Electronic textiles present many advantages over conventional electronics. However, in the process of commercialization of conductive knitted fabrics, it is a great challenge to control the complicated resistive networks in conductive knitted fabrics for the purpose of cost saving and good esthetics. The resistive networks in conductive knitted fabrics contain length-related resistance and contact resistance. The physical forms of conductive yarns in different fabrication structures can be very different and, thus, the contact resistance varies greatly in different fabrics. So far, study of controlling the resistive property of conductive fabrics has not been conducted. Therefore, establishing a systematic method for the industry as a reference source to produce wearable electronics is in great demand. During the industrialization of conductive knitted fabrics, engineers can estimate the resistive property of the fabric in advance, which makes the production process more effective and cost efficient. What is more, the resistive distribution in the same area of knitted fabrics can be fully controlled.

Improvement in Contact Resistivity to thin film Bi2Te3

2010 ◽  
Vol 1267 ◽  
Author(s):  
Rahul P Gupta ◽  
Ka Xiong ◽  
John B White ◽  
Kyeongjae Cho ◽  
Bruce Gnade
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Surface Preparation ◽  
Contact Resistivity ◽  
Post Deposition Annealing ◽  
Contact Metallization ◽  
Potential Contact ◽  
Te Material ◽  
The Impact ◽  
Post Deposition

AbstractA study of the impact of surface preparation and post-deposition annealing on contact resistivity for sputtered Ni and Co contacts to thin film Bi2Te3 is presented. The contact resistance values obtained using the transfer length method (TLM) for Ni is compared to Co as a potential contact metal to Bi2Te3. Post-deposition annealing at 100°C on samples that were sputter cleaned reduces the contact resistivity to < 10-7 Ω-cm2 for both Ni and Co contacts to Bi2Te3. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric (TE) material, making it a suitable candidate for contact metallization to Bi2Te3 based devices.

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

2020 ◽  
Vol 20 (16) ◽  
pp. 8947-8955
Author(s):  
Robert Sokolovskij ◽  
Jian Zhang ◽  
Hongze Zheng ◽  
Wenmao Li ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Gate Recess ◽  
The Impact

X-ray Characterization of PEALD versus PVD Tantalum Nitride Barrier Deposition and the Impact on Via Contact Resistance

2013 ◽  
Vol 58 (10) ◽  
pp. 215-221 ◽  
Author(s):  
X. Zhang ◽  
O. van der Straten ◽  
T. Bolom ◽  
M. He ◽  
J. Maniscalco ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Tantalum Nitride ◽  
X Ray ◽  
The Impact

The Steady-State Thermal Characteristics Analysis of Precise Composite Grinding Machine

2011 ◽  
Vol 338 ◽  
pp. 241-244
Author(s):  
Hong Lin Zhao ◽  
Rui Chen ◽  
Yu Mei Huang ◽  
Guang Peng Zhang ◽  
Bo Wang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Thermal Deformation ◽  
Thermal Contact Resistance ◽  
Thermal Contact ◽  
Thermal Characteristics ◽  
Numerical Control ◽  
Deformation Analysis ◽  
Characteristics Analysis ◽  
Grinding Machine ◽  
The Impact

It is commonly used method to analyze the overall thermal characteristics of mechanical structure without considering the thermal contact resistance of components. But in terms of precision composite grinding machine, the impact of thermal contact resistance can not be ignored. On the basic of thermal contact resistance characteristics, this article gives the concept and empirical value of the equivalent area factor. By calculating the equivalent contact coefficient, the thermal contact resistance characteristics were integrated into the grinder simulation. According to the structure and processing characteristics of grinder, grinding machine was analyzed in two parts respectively to get the pattern of temperature rise and thermal deformation. Analysis shows the impact that thermal deformation has on working accuracy, so as to provide basis to the compensation of numerical control system to improve the working accuracy.

scholarly journals On the periodicity in the electric touch of chemical elements. Preliminary notice

1900 ◽  
Vol 66 (424-433) ◽  
pp. 450-451 ◽  
Keyword(s):  
Contact Resistance ◽  
Sensitive Element ◽  
Chemical Elements ◽  
Previous Communication ◽  
The Impact ◽  
Electric Waves

In my previous communication an account was given of the contact sensitiveness of elementary substances to electric radiation. It was shown that though many substances exhibit a diminution of contact resistance, there are others, of which potassium may be taken as an example, which show an increase of resistance—an increase which, in some cases, lasts during the impact of electric waves, the sensitive element quickly recovering on the cessation of radiation.

scholarly journals High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6098
Author(s):  
Gwen Rolland ◽  
Christophe Rodriguez ◽  
Guillaume Gommé ◽  
Abderrahim Boucherif ◽  
Ahmed Chakroun ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Device Performance ◽  
High Electron ◽  
Chemical Beam Epitaxy ◽  
High Electron Mobility ◽  
Device Failure ◽  
Gan Hemt ◽  
Silvaco Atlas ◽  
P Type ◽  
The Impact

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

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