scholarly journals Diffusion Creep and Grain Growth in Forsterite +20 vol% Enstatite Aggregates: 1. High-Resolution Experiments and Their Data Analyses

2018 ◽  
Vol 123 (11) ◽  
pp. 9486-9512 ◽  
Author(s):  
T. Nakakoji ◽  
T. Hiraga ◽  
H. Nagao ◽  
S. Ito ◽  
M. Kano
Keyword(s):  
High Resolution ◽  
Grain Growth ◽  
Diffusion Creep ◽  
Data Analyses

Grain growth and the lifetime of diffusion creep deformation

2011 ◽  
Vol 360 (1) ◽  
pp. 257-272 ◽  
Author(s):  
Mark A. Pearce ◽  
John Wheeler
Keyword(s):  
Grain Growth ◽  
Creep Deformation ◽  
Diffusion Creep

Hrtem Observations of Sol-Gel Derived Yag and Alumina/Yag Thin Films

1990 ◽  
Vol 183 ◽  
Author(s):  
R. S. Hay
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Orientation Relationship ◽  
Grain Growth ◽  
Yttrium Aluminum Garnet ◽  
Sol Gel ◽  
Abnormal Grain Growth ◽  
Structure Evolution ◽  
Specimen Preparation ◽  
Ion Milling

AbstractThin films of YAG and YAG/alumina mixtures were prepared by gelling a sol across a TEM grid. The grids were heat-treated to temperatures as high as 1550°C. The resulting ceramic thin films were observed by standard and high resolution TEM techniques. Ion-milling, carbon coating, or other specimen preparation was not necessary. The phase and microstructure evolution, as well as pore structure evolution and spheroidization of film edges could be easily observed. Abnormal grain growth was observed in yttrium-aluminum garnet (YAG) films. Lattice images were taken of the matrix, abnormal grains, and structures that evolved from the abnormal rains at higher temperatures. The grain size preceding abnormal grain growth was 20–50 nm. The abnormal grains were composed of 20–50 nm subgrains with up to several degrees of misorientation. High resolution observations were also made of small (< 0.2 μm) YAG inclusions in alumina. An orientation relationship of (111)[011]alumina//(112)[021]YAGwas observed. This orientation relationship was not observed in large inclusions.

Strategies for data analyses in a high resolution 1H NMR based metabolomics study of a mouse model of Batten disease

Metabolomics ◽  
2007 ◽  
Vol 3 (2) ◽  
pp. 121-136 ◽  
Author(s):  
Michael R. Pears ◽  
Denis Rubtsov ◽  
Hannah M. Mitchison ◽  
Jonathan D. Cooper ◽  
David A. Pearce ◽  
...  
Keyword(s):  
High Resolution ◽  
Mouse Model ◽  
1H Nmr ◽  
Batten Disease ◽  
Data Analyses ◽  
Metabolomics Study

Diffusion Creep during Grain Growth in Nanocrystalline Metals

2004 ◽  
Vol 467-470 ◽  
pp. 1283-1288
Author(s):  
Yuri Estrin ◽  
Günter Gottstein ◽  
Lasar S. Shvindlerman
Keyword(s):  
Grain Size ◽  
Creep Rate ◽  
Grain Growth ◽  
Diffusion Creep ◽  
Secondary Creep ◽  
Rate Reduction ◽  
Vacancy Generation ◽  
Diffusion Controlled ◽  
Initial Stage ◽  
Rate Behaviour

Diffusion controlled creep in nanostructured materials is considered for the case when grain growth occurs concurrently. The Nabarro-Herring and Coble mechanisms that would predict creep rate reduction are re-considered to include the effect of grain-growth induced vacancy generation. It is shown that under such conditions creep is accelerated during an initial stage of grain growth as compared to the case of constant grain size. This creep enhancement stage is followed by a period of reduced creep rate. The predicted strain rate behaviour resembles primary and secondary creep.

Relationship Between The Void And Hillock Formation And The Grain Growth In Thin Aluminum Films

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Stress Relaxation ◽  
Grain Growth ◽  
The Self ◽  
Diffusion Creep ◽  
Silicon Substrates ◽  
Aluminum Films ◽  
Bias Stress ◽  
Transmission Electron ◽  
Thin Aluminum ◽  
Hillock Formation

AbstractVoid and hillock formation during annealing was studied depending on the deposition conditions. Aluminum films were deposited onto oxidized silicon substrates by the self-ion assisted technique. The bias 0 or 6 kV was applied to the substrate during deposition. The films were then annealed in vacuum for 1 hour in the temperature range from 1500 to 550°C. The structure of the films was investigated by transmission electron microscopy.It was found that recrystallization and void and hillock formation in the films depend on the bias during deposition. Normal grain growth occurred in the films deposited without bias. Abnormal grain growth was observed in the 6 kV-films. It was also found that the mechanism of stress relaxation during thermal cycling depends on the self-ion bombardment. In the films prepared without bias, stress relaxation proceeds by diffusion creep. In the films deposited at the 6 kV bias, stress relaxation proceeds by plastic deformation.

Effects of grain growth on grain-boundary diffusion creep by molecular-dynamics simulation

2004 ◽  
Vol 52 (7) ◽  
pp. 1971-1987 ◽  
Author(s):  
A.J. Haslam ◽  
V. Yamakov ◽  
D. Moldovan ◽  
D. Wolf ◽  
S.R. Phillpot ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Grain Boundary ◽  
Grain Growth ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Dynamics Simulation ◽  
Diffusion Creep

Relationship Between The Void and Hillock Formation and The Grain Growth in Thin Aluminum Films

1996 ◽  
Vol 436 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Stress Relaxation ◽  
Grain Growth ◽  
The Self ◽  
Diffusion Creep ◽  
Aluminum Films ◽  
Bias Stress ◽  
Transmission Electron ◽  
Hillock Formation ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

AbstractVoid and hillock formation during annealing was studied depending on the deposition conditions. Aluminum films were deposited onto oxidized silicon substrates by the self-ion assisted technique. The bias 0 or 6 kV was applied to the substrate during deposition. The films were then annealed in vacuum for 1 hour in the temperature range from 150° to 550°C. The structure of the films was investigated by transmission electron microscopy. The void and hillock formation was studied with optical and scanning electron microscopes.It was found that recrystallization and void and hillock formation in the films depend on the bias during deposition. Normal grain growth occurred in the films deposited without bias. Abnormal grain growth was observed in the 6 kV-films. It was also found that the mechanism of stress relaxation during thermal cycling depends on the self-ion bombardment. In the films prepared without bias, stress relaxation proceeds by diffusion creep. In the films deposited at the 6 kV bias, stress relaxation proceeds by plastic deformation.

Incontinuous Grain Growth in Pure Co Nanocrystalline Powders Prepared by Mechanical Attrition

2005 ◽  
Vol 20 (11) ◽  
pp. 3054-3060 ◽  
Author(s):  
Xiaoyan Song ◽  
Jiuxing Zhang ◽  
Keyong Yang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Growth ◽  
Boundary Migration ◽  
High Energy ◽  
Nanocrystalline Powders ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Different Temperatures

Highly pure Co nanocrystalline powders were prepared by high-energy ball milling under the condition that all operations on the powders were performed in the glovebox filled with highly purified argon gas. A series of annealing experiments at different temperatures were carried out to investigate grain growth in the milled powders. The as-milled and annealed microstructures were observed and analyzed with transmission electron microscopy (TEM), high-resolution TEM, high-resolution scanning electron microscopy, and x-ray diffraction methods. Characteristics of the incontinuous grain growth in the milled nanocrystalline powders were found. It is considered by the authors that the sharp increase in nanograin size in certain intermediate-temperature region is a result of accelerated grain growth promoted by the stored energy as a supplied driving force, and through a particular dominant mechanism of nanograin rotations in contrast to grain boundary migration in polycrystalline materials.

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