scholarly journals Low temperature dependence of electrical resistivity: Implications for near surface geophysical monitoring

2007 ◽  
Vol 34 (18) ◽  
Author(s):  
Kevin Hayley ◽  
L. R. Bentley ◽  
M. Gharibi ◽  
M. Nightingale
2003 ◽  
Vol 802 ◽  
Author(s):  
Michael J. Fluss ◽  
Brian D. Wirth ◽  
Mark Wall ◽  
Thomas E. Felter ◽  
Maria J. Caturla ◽  
...  

ABSTRACTWe earlier reported the measured decrease of electrical resistivity during isochronal-annealing of ion irradiation damage that was accumulated at low-temperature (10 or 20K), and the temperature dependence of the resistance of defect-populations produced by low-temperature damage-accumulation and annealing in a stabilized δ-phase plutonium alloy, Pu(3.3 at%Ga)[1]. We noted that the temperature dependence of the resistance of defects resulting from low-temperature damage accumulation and subsequent annealing exhibits a -ln(T) temperature dependence suggestive of a Kondo impurity. A discussion of a possible “structure-property” effect, as it might relate to the nature of the δ-phase of Pu, is presented.


2007 ◽  
Vol 26-28 ◽  
pp. 1059-1062 ◽  
Author(s):  
Il Ho Kim ◽  
Jung Il Lee ◽  
G.S. Choi ◽  
J.S. Kim

Thermal, electrical and mechanical properties of high purity niobium and tantalum refractory rare metals were investigated to evaluate the physical purity. Higher purity niobium and tantalum metals showed lower hardness due to smaller solution hardening effect. Temperature dependence of electrical resistivity showed a typical metallic behavior. Remarkable decrease in electrical resistivity was observed for a high purity specimen at low temperature. However, thermal conductivity increased for a high purity specimen, and abrupt increase in thermal conductivity was observed at very low temperature, indicating typical temperature dependence of thermal conductivity for high purity metals. It can be known that reduction of electron-phonon scattering leads to increase in thermal conductivity of high purity niobium and tantalum metals at low temperature.


2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.


Alloy Digest ◽  
1960 ◽  
Vol 9 (4) ◽  

Abstract EVANOHM is a nickel-base alloy having low temperature coefficient of resistance and high electrical resistivity. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on joining. Filing Code: Ni-57. Producer or source: Wilbur B. Driver Company.


CATENA ◽  
2021 ◽  
Vol 207 ◽  
pp. 105596
Author(s):  
Prashant Kumar ◽  
Prarabdh Tiwari ◽  
Anand Singh ◽  
Arkoprovo Biswas ◽  
Tapas Acharya

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.


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