scholarly journals Statistical distributions of dissipated power in electronic circuits immersed in a random electromagnetic field

Radio Science ◽  
2005 ◽  
Vol 40 (6) ◽  
pp. n/a-n/a ◽  
Author(s):  
L. R. Arnaut
Keyword(s):  
Electromagnetic Field ◽  
Statistical Distributions ◽  
Electronic Circuits

scholarly journals Modelling and Design of HF RFID Passive Transponders with Additional Energy Harvester

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
Piotr Jankowski-Mihułowicz ◽  
Włodzimierz Kalita ◽  
Mariusz Skoczylas ◽  
Mariusz Węglarski
Keyword(s):  
Electromagnetic Field ◽  
Energy Harvester ◽  
Communication Process ◽  
Electronic Circuits ◽  
Radio Communication ◽  
Additional Energy ◽  
Power Load ◽  
Passive Transponders ◽  
Proper Operation ◽  
Load Impact

The huge progress in electronics technology and RFID technique gives the opportunity to implement additional features in transponders. It should be noted that either passive or semipassive transponders are supplied with energy that is derived from the electromagnetic field generated by the read/write device and its antenna. This power source is used to conduct radio-communication process and excess energy could be used to power the extra electronic circuits, but the problem is to determine the additional power load impact on the RFID system proper operation and size of interrogation zone. The ability to power the supplementary electronic blocks applied in the HF passive transponders is discussed in detail this paper. The simulation model and test samples with a harvester that recovers energy from the electromagnetic field of read/write device and its antenna have been developed in order to conduct investigations. The harvested energy has been utilized to supply a microprocessor acquisition block for LTCC pressure sensor developed in research previously described by authors.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Sign in / Sign up

Export Citation Format

Share Document