Transparent Conductive Oxides as Near-IR Plasmonic Materials: The Case of Al-Doped ZnO Derivatives

ACS Photonics ◽  
2014 ◽  
Vol 1 (8) ◽  
pp. 703-709 ◽  
Author(s):  
Arrigo Calzolari ◽  
Alice Ruini ◽  
Alessandra Catellani
Keyword(s):  
Transparent Conductive Oxides ◽  
Plasmonic Materials ◽  
Near Ir ◽  
Doped Zno

One-Step Synthesis of Porous Transparent Conductive Oxides by Hierarchical Self-Assembly of Aluminum-Doped ZnO Nanoparticles

2020 ◽  
Vol 12 (8) ◽  
pp. 9589-9599 ◽  
Author(s):  
Renheng Bo ◽  
Fan Zhang ◽  
Shulin Bu ◽  
Noushin Nasiri ◽  
Iolanda Di Bernardo ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Self Assembly ◽  
Transparent Conductive Oxides ◽  
One Step ◽  
Doped Zno

Near-IR (1 – 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO

2017 ◽  
Author(s):  
David C. Look ◽  
Kevin D. Leedy ◽  
Gordon J. Grzybowski ◽  
Bruce B. Claflin
Keyword(s):  
Resonance Wavelength ◽  
Plasmonic Resonance ◽  
Near Ir ◽  
Doped Zno

Optimization of Al-doped ZnO films for low loss plasmonic materials at telecommunication wavelengths

2013 ◽  
Vol 102 (17) ◽  
pp. 171103 ◽  
Author(s):  
H. Kim ◽  
M. Osofsky ◽  
S. M. Prokes ◽  
O. J. Glembocki ◽  
A. Piqué
Keyword(s):  
Zno Films ◽  
Low Loss ◽  
Plasmonic Materials ◽  
Doped Zno

Tailoring the resonance wavelength and loss of highly Ga doped ZnO plasmonic materials by varied doping content and substrate temperature

2016 ◽  
Vol 605 ◽  
pp. 95-101 ◽  
Author(s):  
Chaoting Zhu ◽  
Jia Li ◽  
Ye Yang ◽  
Pinjun Lan ◽  
Jinhua Huang ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Resonance Wavelength ◽  
Doping Content ◽  
Plasmonic Materials ◽  
Doped Zno

Transparent conductive oxides: Plasmonic materials for telecom wavelengths

2011 ◽  
Vol 99 (2) ◽  
pp. 021101 ◽  
Author(s):  
M. A. Noginov ◽  
Lei Gu ◽  
J. Livenere ◽  
G. Zhu ◽  
A. K. Pradhan ◽  
...  
Keyword(s):  
Transparent Conductive Oxides ◽  
Plasmonic Materials

Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

2014 ◽  
Vol 29 (12) ◽  
pp. 122001 ◽  
Author(s):  
B Macco ◽  
D Deligiannis ◽  
S Smit ◽  
R A C M M van Swaaij ◽  
M Zeman ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Transparent Conductive Oxides ◽  
Doped Zno

scholarly journals Sol–Gel-Deposited Ti-Doped ZnO: Toward Cell Fouling Transparent Conductive Oxides

ACS Omega ◽  
2019 ◽  
Vol 4 (7) ◽  
pp. 11354-11363 ◽  
Author(s):  
Rehab Ramadan ◽  
David Romera ◽  
Rosalía Delgado Carrascón ◽  
Miguel Cantero ◽  
John-Jairo Aguilera-Correa ◽  
...  
Keyword(s):  
Sol Gel ◽  
Transparent Conductive Oxides ◽  
Doped Zno

scholarly journals Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 4 ◽  
Author(s):  
Jin-Cherng Hsu ◽  
Yu-Yun Chen
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Free Carrier ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Lorentz Model ◽  
Electrical And Optical Properties ◽  
Near Ir ◽  
Doped Zno ◽  
20 Nm

In this research, zinc oxide (ZnO) films are doped with various amounts of Al dopants, from 0 to 13 at.%, using ion-beam co-sputtering for Zn and Al metallic targets at room temperature. The Al-doped ZnO (AZO) films appear to have lower transmittances in the UV and near-IR ranges. The electrical and optical properties of each film are successfully analyzed by using the spectroscopic ellipsometry of two Lorentz oscillators for the two lower transmittances. The optimal AZO film is deposited with an Al-dopant of 1.5 at.% at an oxygen partial pressure of 0.12 mTorr; it has the smallest resistivity of 7.8 × 10−4 Ω cm and high transmittance of > 80% in the visible regions. The free carrier concentration and mobility evaluated using ellipsometry are different from those measured using the Hall effect. This phenomenon was the result of the grain boundary scattering due to the small ~20-nm grain size of the AZO film used in this study.

Room Temperature Deposition of Highly Transparent n-ZnO on PET and ZnO Semiconductor FET

2012 ◽  
Vol 1436 ◽  
Author(s):  
Alessandro Neri ◽  
Riccardo Lotti ◽  
Dmitry Yarmolich ◽  
Petr Nozar ◽  
Santiago Quiroga ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Near Ir ◽  
Pattern Structures ◽  
Plasma Ablation ◽  
Temperature Deposition ◽  
Doped Zno ◽  
Pulsed Plasma Deposition

ABSTRACTIn this paper we report on the fabrication of n-doped ZnO and semiconducting n-ZnO at room temperature by a new ablation deposition technology that makes use of electron/plasma ablation sources named Pulsed Plasma Deposition (PPD) developed by Organic Spintronics Srl.The oxygen vacancies n-doped ZnO PPD grown thin film is deposited on PET and shows a resistivity of 3 x 10-4ohm cm. The n-ZnO TCO is compact, smooth and highly transparent in the UV-VIS (better than 90 T%) as well as in the near IR spectral range and it is remarkably temperature stable. Typical ZnO deposition rate of the PPD is 500 nm/min.The RT deposited semiconductor ZnO shows a very large Hall electron mobility up to 1000 cm2/Vs approaching that of the single crystal. Preliminary results of Si/SiO2 based bottom gate and contact FET test pattern structures with a 50 nm overlaying ZnO thin film shows an ON/OFF ratio of 50000 and a FET mobility of 1 cm2/Vs. Further implementation on appropriate FET design will be performed to explore the possibility to achieve a larger FET mobility. The PPD proves to be an enabling technology that makes it possible the advent of flexible OLED displays.

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