Redox-Active Molecular Wires Incorporating Ruthenium(II) σ-Arylacetylide Complexes for Molecular Electronics

2008 ◽  
Vol 27 (4) ◽  
pp. 509-518 ◽  
Author(s):  
Céline Olivier ◽  
BongSoo Kim ◽  
Daniel Touchard ◽  
Stéphane Rigaut
2008 ◽  
Vol 22 (12) ◽  
pp. 1183-1202 ◽  
Author(s):  
QILIANG LI

As CMOS technology extends beyond the current technology node, many challenges to conventional MOSFET were raised. Non-classical CMOS to extend and fundamentally new technologies to replace current CMOS technology are under intensive investigation to meet these challenges. The approach of hybrid silicon/molecular electronics is to provide a smooth transition technology by integrating molecular intrinsic scalability and diverse properties with the vast infrastructure of traditional MOS technology. Here we discuss: (1) the integration of redox-active molecules into Si -based structures, (2) characterization and modeling of the properties of these Si /molecular systems, (3) single and multiple states of Si /molecular memory, and (4) applications based on hybrid Si /molecular electronic system.


2007 ◽  
Vol 111 (20) ◽  
pp. 7521-7526 ◽  
Author(s):  
Kim ◽  
Jeremy M. Beebe ◽  
Céline Olivier ◽  
Stéphane Rigaut ◽  
Daniel Touchard ◽  
...  

2007 ◽  
Vol 5 (3) ◽  
pp. 793-812 ◽  
Author(s):  
J. Laxmikanth Rao

AbstractDensity Functional Theory (DFT) calculations and Frontier Molecular Orbital (FMO) analysis have been carried out at B3LYP/6-31G(d,p) level of theory on some Donor-Bridge-Acceptor (D-B-A) molecules for their electrical rectification behavior. The donor-acceptor-heterocyclics (D/A-heterocyclics) (namely thiophene, furan and pyrrole rings) are attached as donor and acceptors to the two ends of cumulenic bridge. FMO analysis indicates that the molecules having even number of double bonds in the bridge, possess a complete localization of the MOs i.e., the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) are localized on the donor and the acceptor side of the molecules respectively, and LUMO+1 is localized on the donor side, where as in case of odd number of double bonds in the bridge, both the HOMO and LUMOs are delocalized all over the molecule. The Potential Drop (PD) in the former case decreases as the number of double bonds increases in the bridge and due to the presence of the mutually orthogonal and noninteracting π-clouds, they can act as molecular rectifiers. For the molecules with the odd number of double bonds due to the low-lying LUMO delocalized all over the molecule, may find application as molecular wires in molecular electronics circuits.


2002 ◽  
Vol 06 (12) ◽  
pp. 795-805 ◽  
Author(s):  
Jeffrey R. Reimers ◽  
Noel S. Hush ◽  
Maxwell J. Crossley

Porphyrins and phthalocyanines have now been assembled in a multitude of different architectures, each of which may be identified with a different scenario of the coupling acting between the porphyrins. The synthetic flexibility of these compounds makes possible the design of particular molecules for specific applications in molecular electronics, both in naturally occurring and synthetic devices. Here, we form an overview of these features and focus on the coupling strength, considering what values are appropriate for different molecular electronics applications. In particular, we focus on model compounds that have been prepared as mimics of naturally occurring photosynthetic functional units, oligoporphyrins molecular wires, and stacked systems in which small changes in geometry can affect significant changes in the inter-porphyrin coupling and hence produce dramatic changes in device properties.


2002 ◽  
Vol 32 (2) ◽  
pp. 96-103 ◽  
Author(s):  
Neil Robertson ◽  
Craig A. McGowan

2009 ◽  
Vol 23 (30) ◽  
pp. 5657-5669 ◽  
Author(s):  
SEIFOLLAH JALILI ◽  
ABDOLHAKIM PANGH

We investigated the electron transport properties of thiophen-bithiol-based molecular wires through atomic metal–thiophen–metal systems using the first principle methods. Various metal–thiophen–metal atomic systems are constructed with different end atoms (S, Se, and Te). The electron transport of the atomic system is systematically studied by analysis of transmission function, density of states, and current–voltage characteristics of the systems.


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