Photoelectron Spectra of Organometallic Compounds Containing Silicon-Silicon and Silicon-Germanium Bonds: Valence Band Studies

1994 ◽  
Vol 13 (9) ◽  
pp. 3671-3678 ◽  
Author(s):  
Douglas G. J. Sutherland ◽  
Jian Z. Xiong ◽  
Zhifeng Liu ◽  
T. K. Sham ◽  
G. Michael Bancroft ◽  
...  
Keyword(s):  
Valence Band ◽  
Silicon Germanium ◽  
Organometallic Compounds ◽  
Photoelectron Spectra ◽  
Silicon Silicon

Examination of the Silicon – Silicon Carbide Interface by Ultraviolet Photoemission Spectroscopy

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Koitzscht ◽  
M. O'Brient ◽  
D. Johri ◽  
A. Stoltzt ◽  
R. Nemanicht
Keyword(s):  
Silicon Carbide ◽  
Valence Band ◽  
High Vacuum ◽  
Valence Band Maximum ◽  
Integrated System ◽  
Ultra High Vacuum ◽  
Photoemission Spectroscopy ◽  
Ambient Atmosphere ◽  
Silicon Silicon ◽  
State Feature

ABSTRACTPhotoemission spectroscopy (UPS) was used to investigate the interface properties of deposited silicon on hexagonal 6H-silicon carbide. SiC cleaned in Si flux from a molecular beam epitaxy (MBE) system was used for this study. All processes were accomplished in an ultra high vacuum integrated system that allowed all cleaning, deposition, and analysis to be completed without exposure to ambient atmosphere. Thicknesses of sub- to multiple monolayers were deposited and the valence band structure was investigated. The valence band maximum (VBM) was observed to shift for Si depositions greater than 1 monolayer. The VBM offset was determined to be 2.4eV for a layer of 60Å Si on SiC. Furthermore, the prominent surface state feature of the silicon carbide (0001)si surface is reduced after Si deposition. The results are discussed in terms of the electronic properties of the Si – SiC interface.

Electronic Structure and Magnetic Properties of Iron Doped TiO2 (Rutile): XPS Measurements and CPA Calculations

2014 ◽  
Vol 215 ◽  
pp. 28-34 ◽  
Author(s):  
Michael A. Korotin ◽  
Nikolay A. Skorikov ◽  
Ernst Z. Kurmaev ◽  
Dmitry A. Zatsepin ◽  
Seif O. Cholakh
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Coherent Potential Approximation ◽  
Photoelectron Spectra ◽  
Cation Substitution ◽  
Spectral Features ◽  
Potential Approximation ◽  
X Ray

X-ray photoelectron spectra of TiO2:Fe are measured. Electronic structure and magnetic properties of rutile doped by iron are calculated in frames of the coherent potential approximation. The main experimental spectral features of TiO2:Fe such as heterovalent cation substitution (Fe3+→Ti4+), decreasing of the band gap value and appearance of additional features at the bottom and top of X-ray photoelectron spectra of valence band in comparison with those for undoped TiO2 are described.

Electronic density of states and the x-ray photoelectron spectra of the valence band of Cu-Pd alloys

1986 ◽  
Vol 33 (4) ◽  
pp. 2370-2379 ◽  
Author(s):  
H. Winter ◽  
P. J. Durham ◽  
W. M. Temmerman ◽  
G. M. Stocks
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectra ◽  
Electronic Density ◽  
X Ray ◽  
Electronic Density Of States

Amorphous Silicon/Silicon Germanium Alloy Superlattices with Periods from 1 to 100 NM

1989 ◽  
Vol 149 ◽  
Author(s):  
J. P. Conde ◽  
V. Chu ◽  
S. Wagner
Keyword(s):  
Silicon Germanium ◽  
Hole Mobility ◽  
State Density ◽  
Hole Transport ◽  
Barrier Thickness ◽  
Tail State ◽  
Recombination Lifetime ◽  
Germanium Alloy ◽  
The Individual ◽  
Silicon Silicon

ABSTRACTThe electron and hole transport perpendicular to the plane of the layers in a-Si:H, F/a-Si, Ge:H, F multilayers is analyzed. We measure the electron dark conductivity σd and its activation energy Ea, d, the photo conductivity σph and its exponent γ, the electron and hole mobility-deep trapping lifetime (μτd)e, h and the hole mobility-recombination lifetime (μτr)h. We identify three regions of barrier thickness ds with very different transport properties: (a) ds≲50Å, dominated by tunnelling between quantum confined states in the bottom of the wells; (b) 50Å ≲ds≲200Å, in which the well acts as the provider of an extra, controllable tail state density; and (c) ds≳200Å, where the individual layers are essentially decoupled.

Valence band photoelectron spectra of platinum cyanides

1973 ◽  
Vol 22 (3) ◽  
pp. 489-494 ◽  
Author(s):  
R. Bastasz ◽  
David Cahen ◽  
Joseph E. Lester ◽  
Jayaraman Rajaram
Keyword(s):  
Valence Band ◽  
Photoelectron Spectra
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