Facile Synthetic Access to Multisubstituted Benz[f]indenones and Their Application as Ligands to the First Synthesis of Group(IV) Metallocene Complexes

2003 ◽  
Vol 5 (17) ◽  
pp. 3151-3153 ◽  
Author(s):  
Do Han Kim ◽  
Seung Uk Son ◽  
Young Keun Chung
Keyword(s):  
Group Iv ◽  
Metallocene Complexes

Synthesis, characterization, and structures of Group IV metallocene complexes of heterodifunctional ligands containing oxygen and sulfur donor atoms

1993 ◽  
Vol 12 (4) ◽  
pp. 1314-1318 ◽  
Author(s):  
Han Mou Gau ◽  
Chien An Chen ◽  
Shiow Jiuan Chang ◽  
Wei En Shih ◽  
Teng Kuei Yang ◽  
...  
Keyword(s):  
Group Iv ◽  
Metallocene Complexes ◽  
Sulfur Donor

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

ISOMER-SHIFT SYSTEMATICS OF 57Co IMPLANTED IN GROUP IV SEMICONDUCTORS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-893-C6-896 ◽  
Author(s):  
G. WEYER ◽  
G. GREBE ◽  
A. KETTSCHAU ◽  
B. I. DEUTCH ◽  
A. NYLANDSTED LARSEN ◽  
...  
Keyword(s):  
Isomer Shift ◽  
Group Iv ◽  
Group Iv Semiconductors
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