Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors

ACS Nano ◽  
2014 ◽  
Vol 8 (4) ◽  
pp. 3628-3635 ◽  
Author(s):  
Jinshui Miao ◽  
Weida Hu ◽  
Nan Guo ◽  
Zhenyu Lu ◽  
Xuming Zou ◽  
...  
Nano Letters ◽  
2014 ◽  
Vol 14 (2) ◽  
pp. 694-698 ◽  
Author(s):  
Liang Ma ◽  
Wei Hu ◽  
Qinglin Zhang ◽  
Pinyun Ren ◽  
Xiujuan Zhuang ◽  
...  

2015 ◽  
Vol 8 (1) ◽  
pp. 29-35 ◽  
Author(s):  
Huang Tan ◽  
Chao Fan ◽  
Liang Ma ◽  
Xuehong Zhang ◽  
Peng Fan ◽  
...  

2018 ◽  
Vol 6 (18) ◽  
pp. 4861-4865 ◽  
Author(s):  
Yuange Wang ◽  
Xiaowen Huang ◽  
Di Wu ◽  
Ranran Zhuo ◽  
Enping Wu ◽  
...  

High-performance room-temperature infrared photodetectors based on MoS2/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.


Author(s):  
Yihao Zheng ◽  
Haopeng Wei ◽  
Ping Liang ◽  
Xiaokai Xu ◽  
Xingcai Zhang ◽  
...  

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.


Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.


1998 ◽  
Vol 45 (4) ◽  
pp. 503-508 ◽  
Author(s):  
Pi-Tai Chou ◽  
Youn-Chan Chen ◽  
Shu-Juan Chen ◽  
Min-Zen Lee ◽  
Ching-Yen Wei ◽  
...  

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