The Fluorescence Intermittency for Quantum Dots Is Not Power-Law Distributed: A Luminescence Intensity Resolved Approach

ACS Nano ◽  
2014 ◽  
Vol 8 (4) ◽  
pp. 3506-3521 ◽  
Author(s):  
Robert Schmidt ◽  
Cornelius Krasselt ◽  
Clemens Göhler ◽  
Christian von Borczyskowski
Keyword(s):  
Quantum Dots ◽  
Power Law ◽  
Luminescence Intensity ◽  
Fluorescence Intermittency

An Intermittent Generation–Recombination Process as a Possible Origin of 1/f Fluctuations in Semiconductor Materials

2017 ◽  
Vol 16 (04) ◽  
pp. 1750034 ◽  
Author(s):  
Ferdinand Grüneis
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Power Law ◽  
Phonon Scattering ◽  
Recombination Process ◽  
Semiconductor Materials ◽  
Conduction Electrons ◽  
Fluorescence Intermittency ◽  
The Impact ◽  
Electron Phonon Scattering

Inspired by the phenomenon of fluorescence intermittency in quantum dots and other materials, we introduce small off-states (intermissions) which interrupt the generation and recombination (= [Formula: see text]–[Formula: see text]) process in a semiconductor material. If the remaining on-states are power-law distributed, we find an almost pure 1/[Formula: see text] spectrum. Besides well-known [Formula: see text]–[Formula: see text] noise, we obtain two 1/[Formula: see text] noise components which can be attributed to the intermittent generation and recombination process. These components can be given the form of Hooge's relation with a Hooge coefficient [Formula: see text] describing the contribution of the generation and recombination process, respectively. Herein, the coefficients [Formula: see text] and [Formula: see text] describe impact of intermissions which in general are different for the generation and recombination process. The impact of [Formula: see text]–[Formula: see text] noise on 1/[Formula: see text] noise is comprised in the coefficient [Formula: see text] for the generation and [Formula: see text] for the recombination process. These coefficients are specified for an intrinsic and a slightly extrinsic semiconductor as well as for a semiconductor with traps; for the latter, the temperature dependence of 1/[Formula: see text] noise is also investigated. 1/[Formula: see text] noise is shown to be inversely related to the number of neutral and ionized [Formula: see text]-atoms rather than to the number of conduction electrons as defined in Hooge's relation. As a possible origin of 1/[Formula: see text] noise in semiconductors, electron–phonon scattering is suggested.

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Fluorescence Intermittency and Energy Transfer in Small Clusters of Semiconductor Quantum Dots

2010 ◽  
Vol 114 (35) ◽  
pp. 14831-14837 ◽  
Author(s):  
Douglas P. Shepherd ◽  
Kevin J. Whitcomb ◽  
Kenneth K. Milligan ◽  
Peter M. Goodwin ◽  
Martin P. Gelfand ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Transfer ◽  
Semiconductor Quantum Dots ◽  
Small Clusters ◽  
Fluorescence Intermittency

Nonexponential “blinking” kinetics of single CdSe quantum dots: A universal power law behavior

2000 ◽  
Vol 112 (7) ◽  
pp. 3117-3120 ◽  
Author(s):  
M. Kuno ◽  
D. P. Fromm ◽  
H. F. Hamann ◽  
A. Gallagher ◽  
D. J. Nesbitt
Keyword(s):  
Quantum Dots ◽  
Power Law ◽  
Cdse Quantum Dots ◽  
Universal Power Law ◽  
Kinetics Of

Correlation between Fluorescence Intermittency and Spectral Diffusion in Single Semiconductor Quantum Dots

2000 ◽  
Vol 85 (15) ◽  
pp. 3301-3304 ◽  
Author(s):  
R. G. Neuhauser ◽  
K. T. Shimizu ◽  
W. K. Woo ◽  
S. A. Empedocles ◽  
M. G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots ◽  
Spectral Diffusion ◽  
Fluorescence Intermittency

Statistical Particle Tracking Velocimetry Using Molecular and Quantum Dot Tracer Particles

2005 ◽  
Author(s):  
Jeffrey S. Guasto ◽  
Peter Huang ◽  
Kenneth S. Breuer
Keyword(s):  
Quantum Dots ◽  
Particle Tracking ◽  
Particle Tracking Velocimetry ◽  
Experimental Validation ◽  
Drop Out ◽  
Tracer Particles ◽  
Fluorescence Intermittency ◽  
Distributed Tracking ◽  
Fluorescent Molecules ◽  
Measured Particle

We present the theory and experimental validation of a particle tracking velocimetry algorithm developed for application with nanometer-sized tracer particles such as fluorescent molecules and quantum dots (QDs). Traditional algorithms are challenged by extremely small tracers due to difficulties in determining the particle center, shot noise, high drop-in/drop-out and, in the case of quantum dots, fluorescence intermittency (blinking). The algorithms presented here determine real velocity distributions from measured particle displacement distributions by statistically removing randomly distributed tracking events. The theory was verified through tracking experiments using 54 nm flourescent dextran molecules and 6 nm QDs.

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