scholarly journals Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices

ACS Nano ◽  
2013 ◽  
Vol 7 (10) ◽  
pp. 8771-8779 ◽  
Author(s):  
Artem A. Bakulin ◽  
Stefanie Neutzner ◽  
Huib J. Bakker ◽  
Laurent Ottaviani ◽  
Damien Barakel ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Trapping ◽  
Photovoltaic Devices ◽  
Colloidal Quantum Dot

Thermal Imaging with Plasmon Resonance Enhanced HgTe Colloidal Quantum Dot Photovoltaic Devices

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 7362-7370 ◽  
Author(s):  
Xin Tang ◽  
Matthew M. Ackerman ◽  
Philippe Guyot-Sionnest
Keyword(s):  
Quantum Dot ◽  
Plasmon Resonance ◽  
Thermal Imaging ◽  
Photovoltaic Devices ◽  
Colloidal Quantum Dot

Low-Temperature-Processed 9% Colloidal Quantum Dot Photovoltaic Devices through Interfacial Management of p-n Heterojunction

2016 ◽  
Vol 6 (8) ◽  
pp. 1502146 ◽  
Author(s):  
Randi Azmi ◽  
Havid Aqoma ◽  
Wisnu Tantyo Hadmojo ◽  
Jin-Mun Yun ◽  
Soyeon Yoon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Photovoltaic Devices ◽  
Colloidal Quantum Dot

scholarly journals Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite

2021 ◽  
Vol 11 (11) ◽  
pp. 5020
Author(s):  
Minho Kim ◽  
Seongkeun Oh ◽  
Seungho Song ◽  
Jiwan Kim ◽  
Yong-Hoon Kim
Keyword(s):  
Quantum Dot ◽  
Charge Trapping ◽  
Switching Behavior ◽  
Trap States ◽  
Solution Processed ◽  
Current Switching ◽  
Limited Current ◽  
Current Conduction ◽  
Colloidal Quantum Dot ◽  
Memristor Device

In this study, we demonstrate solution-processed memristor devices using a CdSe/ZnS colloidal quantum dot (CQD)/poly(methyl methacrylate) (PMMA) composite and their electrical characteristics were investigated. Particularly, to obtain stable memristive characteristics with a large current switching ratio, the concentration of CdSe/ZnS QDs in the PMMA matrix was optimized. It was found that with the CdSe/ZnS QD concentration of 1 wt%, the memristor device exhibited a high current switching ratio of ~104 and a retention time over 104 s, owing to the efficient charge trapping and de-trapping during the set and reset processes, respectively. In addition, we investigated the operational stability of the device by carrying out the cyclic endurance test and it was found that the memristor device showed stable switching behavior up to 400 cycles. Furthermore, by analyzing the conduction behavior of the memristor device, we have deduced the possible mechanisms for the degradation of the switching characteristics over long switching cycles. Specifically, it was observed that the dominant conduction mechanism changed from trap-free space charge-limited current conduction to trap charge-limited current conduction, indicating the creation of additional trap states during the repeated operation, disturbing the memristive operation.

Toward printable solar cells based on PbX colloidal quantum dot inks

2021 ◽  
Vol 6 (1) ◽  
pp. 8-23
Author(s):  
Yang Liu ◽  
Guozheng Shi ◽  
Zeke Liu ◽  
Wanli Ma
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Colloidal Quantum Dot

This review summarizes the advances in solar cells based on PbX CQD inks, including both lab-scale and large-area photovoltaic devices.

Stabilizing Surface Passivation Enables Stable Operation of Colloidal Quantum Dot Photovoltaic Devices at Maximum Power Point in an Air Ambient

2020 ◽  
Vol 32 (7) ◽  
pp. 1906497 ◽  
Author(s):  
Jongmin Choi ◽  
Min‐Jae Choi ◽  
Junghwan Kim ◽  
Filip Dinic ◽  
Petar Todorovic ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Surface Passivation ◽  
Maximum Power ◽  
Stable Operation ◽  
Photovoltaic Devices ◽  
Maximum Power Point ◽  
Colloidal Quantum Dot ◽  
Power Point

scholarly journals Reducing charge trapping in PbS colloidal quantum dot solids

2014 ◽  
Vol 104 (11) ◽  
pp. 112104 ◽  
Author(s):  
D. M. Balazs ◽  
M. I. Nugraha ◽  
S. Z. Bisri ◽  
M. Sytnyk ◽  
W. Heiss ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Trapping ◽  
Colloidal Quantum Dot
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