Impact of Chlorine Functionalization on High-Mobility Chemical Vapor Deposition Grown Graphene

ACS Nano ◽  
2013 ◽  
Vol 7 (8) ◽  
pp. 7262-7270 ◽  
Author(s):  
Xu Zhang ◽  
Allen Hsu ◽  
Han Wang ◽  
Yi Song ◽  
Jing Kong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Grown Graphene

scholarly journals Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

2015 ◽  
Vol 1 (6) ◽  
pp. e1500222 ◽  
Author(s):  
Luca Banszerus ◽  
Michael Schmitz ◽  
Stephan Engels ◽  
Jan Dauber ◽  
Martin Oellers ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Substrate ◽  
High Mobility ◽  
Chemical Vapor ◽  
Magnetic Field Sensors ◽  
Exfoliated Graphene ◽  
Cost Efficient ◽  
Grown Graphene ◽  
Graphene Devices

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2V–1s–1, thus rivaling exfoliated graphene.

High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits

Nanoscale ◽  
2015 ◽  
Vol 7 (25) ◽  
pp. 10954-10962 ◽  
Author(s):  
Yiran Liang ◽  
Xuelei Liang ◽  
Zhiyong Zhang ◽  
Wei Li ◽  
Xiaoye Huo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Flexible Substrates ◽  
Radio Frequency Circuits ◽  
Grown Graphene

Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene.

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible

Flexible and Transparent Dielectric Film with a High Dielectric Constant Using Chemical Vapor Deposition-Grown Graphene Interlayer

ACS Nano ◽  
2013 ◽  
Vol 8 (1) ◽  
pp. 269-274 ◽  
Author(s):  
Jin-Young Kim ◽  
Jongho Lee ◽  
Wi Hyoung Lee ◽  
Iskandar N. Kholmanov ◽  
Ji Won Suk ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Dielectric Constant ◽  
Dielectric Film ◽  
Chemical Vapor ◽  
Transparent Dielectric ◽  
Grown Graphene ◽  
High Dielectric

The Effects of Hydrogen Flowrate during Pre-Annealing on Graphene Growth by Chemical Vapor Deposition Using Methanol as a Liquid Carbon Precursor

2019 ◽  
Vol 290 ◽  
pp. 107-112
Author(s):  
Raed Abdalrheem ◽  
Fong Kwong Yam ◽  
Abdul Razak Ibrahim ◽  
Khi Poay Beh ◽  
Hwee San Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Light Transmittance ◽  
High Hydrogen ◽  
Flow Rates ◽  
Hydrogen Flow ◽  
Number Of Layers ◽  
Crystallite Sizes ◽  
Grown Graphene

Studying an influence of several parameters on Chemical Vapor Deposition (CVD) used for graphene synthesis is crucial to optimizing the graphene quality to be Compatible with advanced devices. The effect of different hydrogen (H2) flow-rates (0, 50, 100, 150, 200, 250, and 300 sccm) during the pre-annealing process on CVD grown graphene have been reported. This study revealed that hydrogen flow rates during annealing changed the surface roughness/smoothness of the copper substrates. For high hydrogen flow rates, the smoothing effect was increased. Furthermore, the annealed graphene samples emerged a deferent number of layers because of morphological surface changes. According to Raman D- to G-band intensity ratios (ID/IG), the graphene quality was influenced by the annealing hydrogen flowrate. The visible light transmittance values of the grown graphene samples confirmed a few number of layers (mono to seven-layer). Mostly, the samples which annealed under moderate hydrogen flow rates showed less defects intensities and higher crystallite sizes.

scholarly journals Large scale structures in chemical vapor deposition-grown graphene on Ni thin films

2020 ◽  
Vol 709 ◽  
pp. 138225
Author(s):  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Sachin Kinge ◽  
Dirk J. Gravesteijn ◽  
Alexey Y. Kovalgin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Scale Structures ◽  
Scale Structures ◽  
Grown Graphene
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