Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS Nano ◽  
2012 ◽  
Vol 6 (6) ◽  
pp. 5234-5241 ◽  
Author(s):  
Michael S. Bresnehan ◽  
Matthew J. Hollander ◽  
Maxwell Wetherington ◽  
Michael LaBella ◽  
Kathleen A. Trumbull ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Epitaxial Graphene ◽  
Wafer Scale

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Science ◽  
2018 ◽  
Vol 362 (6416) ◽  
pp. 817-821 ◽  
Author(s):  
Joo Song Lee ◽  
Soo Ho Choi ◽  
Seok Joon Yun ◽  
Yong In Kim ◽  
Stephen Boandoh ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Monolayer Films ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Liquid Gold ◽  
Grain Formation

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.

Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics

2012 ◽  
Author(s):  
Michael S. Bresnehan ◽  
Matthew J. Hollander ◽  
Rebecca L. Marucci ◽  
Michael LaBella ◽  
Kathleen A. Trumbull ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Epitaxial Graphene ◽  
Wafer Scale

Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films

2021 ◽  
Author(s):  
Yanwei He ◽  
Yuan Li ◽  
Miguel Isarraraz ◽  
Pedro Pena ◽  
Jason Tran ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystal ◽  
Hexagonal Boron Nitride ◽  
Monolayer Films ◽  
Wafer Scale

scholarly journals Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Nature ◽  
2020 ◽  
Vol 579 (7798) ◽  
pp. 219-223 ◽  
Author(s):  
Tse-An Chen ◽  
Chih-Piao Chuu ◽  
Chien-Chih Tseng ◽  
Chao-Kai Wen ◽  
H.-S. Philip Wong ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystal ◽  
Hexagonal Boron Nitride ◽  
Wafer Scale

Reaction Synthesized Boron Nitride-Containing Composites (BNCC)

2007 ◽  
Vol 280-283 ◽  
pp. 1385-1390
Author(s):  
Guo Jun Zhang ◽  
Tatsuki Ohji ◽  
Shuzo Kanzaki
Keyword(s):  
Boron Nitride ◽  
Hot Pressing ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
High Strength ◽  
Reactive Sintering ◽  
Boron Source ◽  
Inorganic Reactions ◽  
Reactive Hot Pressing

Based on the proposed inorganic reactions a series of high performance hexagonal boron nitride-containing composites (BNCC), include SiC-BN, Si3N4-SiC-BN, SiAlON-BN, AlN-BN, Al2O3-BN, AlON-BN and mullite-BN, have been prepared via reactive hot pressing or pressureless reactive sintering. Various boron-bearing components such as B, B4C, AlB2, SiB4, SiB6, B2O3 or H3BO3, 9Al2O3×2B2O3 (9A2B) and 2Al2O3×B2O3 (2AB) are used as the boron source. On the other hand, nitrogen gas or solid state nitirgen-bearing metal nitrides such as Si3N4 and AlN can be used as the nitrogen source. The in situ synthesized composites demonstrated homogeneous and isotropical microstructures with very fine (nano-sized) BN platelets or their agglomerates distributed in the matrixes. These composites showed high strength, low elasticity and improved strain tolerance. In this article the reaction design, thermodynamics, reaction mechanisms, reactive hot pressing or pressureless reactive sintering, microstructures and mechanical properties will be discussed.

scholarly journals Nondestructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayer

2018 ◽  
Vol 10 (30) ◽  
pp. 25804-25810 ◽  
Author(s):  
Andrea Crovetto ◽  
Patrick Rebsdorf Whelan ◽  
Ruizhi Wang ◽  
Miriam Galbiati ◽  
Stephan Hofmann ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Wafer Scale

Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

2019 ◽  
Vol 7 (47) ◽  
pp. 14999-15006 ◽  
Author(s):  
Menglei Gao ◽  
Junhua Meng ◽  
Yanan Chen ◽  
Siyuan Ye ◽  
Ye Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Sapphire Substrates ◽  
Catalyst Free ◽  
Deep Ultraviolet ◽  
Free Growth ◽  
Ultraviolet Photodetectors

Catalyst-free growth of wafer-scale h-BN few-layers is realized on sapphire substrates by the combination of surface nitridation and N+ sputtering.

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