Remote Doping and Schottky Barrier Formation in Strongly Quantum Confined Single PbSe Nanowire Field-Effect Transistors

Soong Ju Oh; David K. Kim; Cherie. R. Kagan

doi:10.1021/nn3009382

Remote Doping and Schottky Barrier Formation in Strongly Quantum Confined Single PbSe Nanowire Field-Effect Transistors

ACS Nano ◽

10.1021/nn3009382 ◽

2012 ◽

Vol 6 (5) ◽

pp. 4328-4334 ◽

Cited By ~ 27

Author(s):

Soong Ju Oh ◽

David K. Kim ◽

Cherie. R. Kagan

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Barrier Formation ◽

Quantum Confined

Download Full-text

Physics of noise in quantum-confined field-effect transistors

Physical Review B ◽

10.1103/physrevb.54.5791 ◽

1996 ◽

Vol 54 (8) ◽

pp. 5791-5800 ◽

Cited By ~ 2

Author(s):

F. Green ◽

M. J. Chivers

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Quantum Confined

Download Full-text

Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors

10.1063/1.4848320 ◽

2013 ◽

Author(s):

V. A. Sydoruk ◽

M. V. Petrychuk ◽

A. Ural ◽

G. Bosman ◽

A. Offenhäusser ◽

...

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Low Noise ◽

Transport Regime ◽

Channel Transport

Download Full-text

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00144 ◽

2017 ◽

Vol 9 (13) ◽

pp. 12046-12053 ◽

Cited By ~ 6

Author(s):

Jorge L. Barreda ◽

Timothy D. Keiper ◽

Mei Zhang ◽

Peng Xiong

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire

Download Full-text

Electrostatics of coaxial schottky-barrier nanotube field-effect transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2003.817228 ◽

2003 ◽

Vol 2 (3) ◽

pp. 175-180 ◽

Cited By ~ 54

Author(s):

D.L. John ◽

L.C. Castro ◽

J. Clifford ◽

D.L. Pulfrey

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

Download Full-text

The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106279 ◽

2022 ◽

Vol 138 ◽

pp. 106279

Author(s):

Wei Li ◽

Jinlei Wei ◽

Wen Chen ◽

Sicheng Jing ◽

Jinghua Pan ◽

...

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorous

Download Full-text

Suppression of short channel effects in 5.1 nm WTe2 in-plane Schottky barrier field-effect transistors by Mo-doping

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106327 ◽

2021 ◽

pp. 106327

Author(s):

Liuming Dou ◽

Zhiqiang Fan ◽

Peng Xiao

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Short Channel ◽

Mo Doping ◽

Channel Effects

Download Full-text

4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses

10.1109/essderc53440.2021.9631818 ◽

2021 ◽

Author(s):

Fengben Xi ◽

Yi Han ◽

Andreas Tiedemann ◽

Detlev Grutzmacher ◽

Qing-Tai Zhao

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

Download Full-text

Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors

The Journal of Physical Chemistry Letters ◽

10.1021/acs.jpclett.9b03339 ◽

2020 ◽

Vol 11 (4) ◽

pp. 1466-1472 ◽

Cited By ~ 4

Author(s):

Qijing Wang ◽

Sai Jiang ◽

Bowen Zhang ◽

Eul-Yong Shin ◽

Yong-Young Noh ◽

...

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Access Resistance

Download Full-text

Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

Solid-State Electronics ◽

10.1016/0038-1101(69)90119-1 ◽

1969 ◽

Vol 12 (2) ◽

pp. 111-116 ◽

Cited By ~ 10

Author(s):

H. Statz ◽

W.v. Münch

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

Download Full-text

Schottky Barrier Field Effect Transistors with a Strained Carbon Nanotube Channel

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2009.1214 ◽

2009 ◽

Vol 6 (7) ◽

pp. 1571-1579 ◽

Cited By ~ 3

Author(s):

Zoheir Kordrostami ◽

Mohammad Hossein Sheikhi

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

Download Full-text