Additive-Driven Assembly of Block Copolymer–Nanoparticle Hybrid Materials for Solution Processable Floating Gate Memory

ACS Nano ◽  
2012 ◽  
Vol 6 (2) ◽  
pp. 1188-1194 ◽  
Author(s):  
Qingshuo Wei ◽  
Ying Lin ◽  
Eric R. Anderson ◽  
Alejandro L. Briseno ◽  
Samuel P. Gido ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Hybrid Materials ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Solution Processable

Floating Gate Memory Based on Ferritin Nanodots with High-kGate Dielectrics

2009 ◽  
Vol 48 (4) ◽  
pp. 04C153 ◽  
Author(s):  
Kosuke Ohara ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Ichiro Yamashita ◽  
Toshitake Yaegashi ◽  
...  
Keyword(s):  
Floating Gate ◽  
Floating Gate Memory

scholarly journals Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone
Keyword(s):  
Neural Networks ◽  
Memory Cell ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Analog Neural Networks

scholarly journals Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks

2019 ◽  
Vol 5 (1) ◽  
pp. 52-57 ◽  
Author(s):  
Sapan Agarwal ◽  
Diana Garland ◽  
John Niroula ◽  
Robin B. Jacobs-Gedrim ◽  
Alex Hsia ◽  
...  
Keyword(s):  
Neural Networks ◽  
Floating Gate ◽  
Floating Gate Memory

MBE-grown Si and Si1−xGexquantum dots embedded within epitaxial Gd2O3on Si(111) substrate for floating gate memory device

2013 ◽  
Vol 24 (50) ◽  
pp. 505709 ◽  
Author(s):  
S Manna ◽  
R Aluguri ◽  
A Katiyar ◽  
S Das ◽  
A Laha ◽  
...  
Keyword(s):  
Memory Device ◽  
Floating Gate ◽  
Floating Gate Memory

Semiconductor Nanocrystal Floating-gate Memory Devices

2004 ◽  
Vol 830 ◽  
Author(s):  
P. Dimitrakis ◽  
P. Normand
Keyword(s):  
Low Voltage ◽  
Ion Beam ◽  
Low Energy ◽  
Floating Gate ◽  
Device Performance ◽  
Memory Devices ◽  
Research Directions ◽  
Semiconductor Nanocrystal ◽  
Floating Gate Memory ◽  
Attractive Option

ABSTRACTCurrent research directions and recent advances in the area of semiconductor nanocrystal floating-gate memory devices are herein reviewed. Particular attention is placed on the advantages, limitations and perspectives of some of the principal new alternatives suggested for improving device performance and reliability. The attractive option of generating Si nanocrystal memories by ion-beam-synthesis (IBS) is discussed with emphasis on the ultra-low-energy (ULE) regime. Pertinent issues related to the fabrication of low-voltage memory cells and the integration of the ULE-IBS technique in manufactory environment are discussed. The effect on device performance of parasitic transistors that form at the channel corner of shallow trench isolated transistors is described in details. It is shown that such parasitic transistors lead to a substantial degradation of the electrical properties of the intended devices and dominates the memory behavior of deep submicronic cells.

The Combined Effects of Cycling Endurance and TID on Floating Gate Memory Cells

2021 ◽  
Author(s):  
Side Song ◽  
Guozhu Liu ◽  
Qi He ◽  
Xiang Gu ◽  
Genshen Hong ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Memory Cell ◽  
Floating Gate ◽  
Combined Effects ◽  
Memory Cells ◽  
Threshold Voltage Shift ◽  
Floating Gate Memory ◽  
Interface Generation ◽  
Radiation Hardened ◽  
Radiation Induced

Abstract In this paper, the combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, the results indicate that: 1.The programmed flash cells with a prior appropriate number of program and erase cycling stress exhibit much smaller threshold voltage shift than their counterpart in response to radiation, which is mainly ascribed to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate; 2.The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in both of the programmed state and erased state; 3. Radiation is more likely to induce interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.

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