Band-Edge Exciton Fine Structure of Small, Nearly Spherical Colloidal CdSe/ZnS Quantum Dots

ACS Nano ◽  
2011 ◽  
Vol 5 (10) ◽  
pp. 8033-8039 ◽  
Author(s):  
Iwan Moreels ◽  
Gabriele Rainò ◽  
Raquel Gomes ◽  
Zeger Hens ◽  
Thilo Stöferle ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fine Structure ◽  
Band Edge

Impact of the Band-Edge Fine Structure on the Energy Transfer between Colloidal Quantum Dots

2013 ◽  
Vol 2 (2) ◽  
pp. 126-130 ◽  
Author(s):  
Iwan Moreels ◽  
Yolanda Justo ◽  
Gabriele Rainò ◽  
Thilo Stöferle ◽  
Zeger Hens ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Transfer ◽  
Fine Structure ◽  
Colloidal Quantum Dots ◽  
Band Edge

Exciton fine structure splitting of single InGaAs self-assembled quantum dots

2004 ◽  
Vol 21 (2-4) ◽  
pp. 175-179 ◽  
Author(s):  
A Högele ◽  
B Alèn ◽  
F Bickel ◽  
R.J Warburton ◽  
P.M Petroff ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fine Structure ◽  
Fine Structure Splitting ◽  
Structure Splitting ◽  
Self Assembled

scholarly journals Fine structure and spin quantum beats in InP quantum dots in a magnetic field

2002 ◽  
Vol 66 (23) ◽  
Author(s):  
I. A. Yugova ◽  
I. Ya. Gerlovin ◽  
V. G. Davydov ◽  
I. V. Ignatiev ◽  
I. E. Kozin ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Fine Structure ◽  
Quantum Beats ◽  
Spin Quantum ◽  
Inp Quantum Dots

Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Small ◽  
2021 ◽  
pp. 2102792
Author(s):  
Young Mo Sung ◽  
Tae‐Gon Kim ◽  
Dong‐Jin Yun ◽  
Mihye Lim ◽  
Dong‐Su Ko ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Gap ◽  
Band Edge ◽  
Trap States ◽  
Carrier Trapping

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

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