Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7585-7592 ◽  
Author(s):  
Bernt Ketterer ◽  
Martin Heiss ◽  
Emanuele Uccelli ◽  
Jordi Arbiol ◽  
Anna Fontcuberta i Morral
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Gaas Nanowires ◽  
Resonant Raman

Temperature dependent electronic band structure of wurtzite GaAs nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 1481-1486 ◽  
Author(s):  
Neimantas Vainorius ◽  
Simon Kubitza ◽  
Sebastian Lehmann ◽  
Lars Samuelson ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Band Structure ◽  
Temperature Dependence ◽  
Electronic Band Structure ◽  
Temperature Dependent ◽  
Electronic Band ◽  
Gaas Nanowires

Temperature dependence of the indicated transitions in wurtzite GaAs.

scholarly journals Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

2013 ◽  
Vol 103 (2) ◽  
pp. 023108 ◽  
Author(s):  
Jaya Kumar Panda ◽  
Anushree Roy ◽  
Mauro Gemmi ◽  
Elena Husanu ◽  
Ang Li ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Resonance Raman Spectroscopy ◽  
Resonance Raman ◽  
Temperature Dependent ◽  
Electronic Band

Magnetoreflection in Ion-Implanted Graphite

1983 ◽  
Vol 27 ◽  
Author(s):  
L.E Mcneil ◽  
B.S. Elman ◽  
M.S Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Raman Spectroscopy ◽  
Band Structure ◽  
Ion Implantation ◽  
Room Temperature ◽  
Electronic Band Structure ◽  
Band Model ◽  
Electronic Band ◽  
Lattice Damage ◽  
Induced Changes ◽  
Foreign Species

ABSTRACTThe use of a hot stage (T ∼ 600°C) for ion implantation into graphite permits the introduction of foreign species into the host material while eliminating most of the lattice damage associated with ion implantation at room temperature. This permits the use of the magnetoreflection technique for examination of changes in the electronic band structure induced by implantation Samples of graphite implanted with 31P and 11B at various energies and fluences are examined, and the in-plane and c-axis disorder are characterized using Raman spectroscopy and Rutherford Backscattering Spectrometer (RBS) techniques. Implantation-induced changes in the electronic band structure are interpreted in terms of the Slonczewski-Weiss- McClure band model. Small changes are found relative to the band parameters that describe pristine graphite.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

THE ELECTRONIC BAND STRUCTURE OF V3Ga AND V3Si

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Ab initio calculation on the Optical Properties of AA- Stacked two dimensional Graphene, Silicene, Germanene, and Stanene

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Complex Refractive Index ◽  
Single Layer ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Wide Range ◽  
Optical Region

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.

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