Temperature and Gate Voltage Dependent Raman Spectra of Single-Layer Graphene

ACS Nano ◽  
2011 ◽  
Vol 5 (6) ◽  
pp. 5273-5279 ◽  
Author(s):  
Khoi T. Nguyen ◽  
Daner Abdula ◽  
Cheng-Lin Tsai ◽  
Moonsub Shim
Keyword(s):  
Raman Spectra ◽  
Gate Voltage ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Voltage Dependent

Annealing Temperature and Substrate Effects on the Raman Spectra of Transferred CVD Graphene

2012 ◽  
Vol 1407 ◽  
Author(s):  
Barbara M. Nichols ◽  
Yasmine R. Doleyres ◽  
Gregory P. Meissner
Keyword(s):  
Raman Spectra ◽  
Intensity Ratio ◽  
Substrate Surface ◽  
Single Layer ◽  
Fused Silica ◽  
Single Layer Graphene ◽  
Hole Doping ◽  
Pmma Layer ◽  
Layer Graphene ◽  
Before And After

ABSTRACTThis work explores the influence of the post-transfer anneal temperature and the substrate on transferred graphene and its Raman properties. Graphene grown by low pressure chemical vapor deposition on copper foils was transferred to SiO2/Si, fused silica, and silicon substrates via a process that involves coating the graphene with PMMA as a protective handling layer during the wet chemical etching of the copper and then placing the PMMA/graphene onto the substrate. The PMMA layer was then removed by heating in a hydrogen/argon atmosphere at temperatures ranging from 350 to 550 °C or by exposing the PMMA to heated acetone vapor/liquid. Raman spectroscopy measurements, taken before and after PMMA removal, reveal differences in the prominent Raman features, the G and G’ peaks, upon annealing. These changes include (1) a shift in the average G and G’ peak positions when comparing Raman spectra before and after PMMA removal and (2) a decrease in the G’:G peak intensity ratio (IG’/IG), which is typically used as a measure of the number of graphene layers. For both the as-transferred graphene and graphene removed by the heated acetone, the IG’/IG peak ratio was approximately 2, indicating single layer graphene. However, when the graphene was annealed at temperatures above 350 °C, the IG’/IG intensity ratio varied from 0.5 to 1.5. These changes in the Raman spectra are similar to those observed in exfoliated single layer graphene supported on SiO2/Si substrates and are indicative of graphene-substrate interaction effects that lead to hole doping of the graphene [1,2]. These trends were observed for graphene transferred to all three substrates, regardless of the substrate surface roughness and/or composition.

Environment-Induced Effects on the Temperature Dependence of Raman Spectra of Single-Layer Graphene

2008 ◽  
Vol 112 (51) ◽  
pp. 20131-20134 ◽  
Author(s):  
Daner Abdula ◽  
Taner Ozel ◽  
Kwangu Kang ◽  
David G. Cahill ◽  
Moonsub Shim
Keyword(s):  
Temperature Dependence ◽  
Raman Spectra ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

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