Layer-by-Layer Doping of Few-Layer Graphene Film

ACS Nano ◽  
2010 ◽  
Vol 4 (8) ◽  
pp. 4595-4600 ◽  
Author(s):  
Fethullah Güneş ◽  
Hyeon-Jin Shin ◽  
Chandan Biswas ◽  
Gang Hee Han ◽  
Eun Sung Kim ◽  
...  
Keyword(s):  
Graphene Film ◽  
Layer By Layer ◽  
Layer Graphene ◽  
Few Layer Graphene

scholarly journals Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 449
Author(s):  
Shuxian Cai ◽  
Xingfang Liu ◽  
Xin Zheng ◽  
Zhonghua Liu
Keyword(s):  
Substrate Surface ◽  
Graphene Film ◽  
Graphene Ribbon ◽  
High Quality ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Few Layer Graphene

Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by μ-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 μm and a length up to 1000 μm, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal.

Few-layer graphene film fabricated by femtosecond pulse laser deposition without catalytic layers

2015 ◽  
Vol 13 (2) ◽  
pp. 021601-21604 ◽  
Author(s):  
Xiangming Dong Xiangming Dong ◽  
Shibing Liu Shibing Liu ◽  
Haiying Song Haiying Song ◽  
Peng Gu Peng Gu ◽  
Xiaoli Li Xiaoli Li
Keyword(s):  
Pulse Laser Deposition ◽  
Pulse Laser ◽  
Femtosecond Pulse ◽  
Graphene Film ◽  
Laser Deposition ◽  
Femtosecond Pulse Laser ◽  
Layer Graphene ◽  
Few Layer Graphene ◽  
Catalytic Layers

Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms

2014 ◽  
Vol 778-780 ◽  
pp. 1162-1165
Author(s):  
Enrique Escobedo-Cousin ◽  
Konstantin Vassilevski ◽  
Toby Hopf ◽  
Nicholas Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Solid Phase ◽  
Formation Mechanisms ◽  
Layer By Layer ◽  
Phase Growth ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
High Temperature Stage ◽  
Few Layer Graphene

This work presents experimental evidence of the formation mechanisms of few-layer graphene (FLG) films on SiC by nickel silicidation. FLG is formed by annealing of a 40 nm thick Ni layer on 6H-SiC at 1035ºC for 60 s, resulting in a Ni2Si layer which may be capped by any Ni that did not react during annealing. It has been proposed that FLG forms on top of the Ni during the high temperature stage. In contrast, during cooling, carbon atoms which were released during the silicidation reaction may diffuse back towards the Ni2Si/SiC interface to form a second FLG film. After annealing, layer-by-layer de-processing was carried out in order to unequivocally identify the FLG at each location using Atomic force microscopy (AFM) and Raman spectroscopy.

Synthesis of Few-Layer Graphene on Copper Using a Low-Cost Atmospheric Thermal Chemical Vapour Deposition System with Methane and Forming Gas

Nano Hybrids ◽  
2016 ◽  
Vol 10 ◽  
pp. 1-13
Author(s):  
M.S. Shamsudin ◽  
S.J. Fishlock ◽  
M. Rusop ◽  
S.M. Sanip ◽  
Suan Hui Pu
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Low Cost ◽  
Graphene Film ◽  
Chemical Vapour ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Atomic Force ◽  
Temperature Deposition ◽  
Few Layer Graphene

Graphene has attracted wide interest across a range of applications due to its electrical, mechanical and optical properties. The use of a low-cost, table-top chemical vapour deposition system to deposit few-layer graphene onto copper is reported in this work. Characterisation of the graphene is performed using Raman spectroscopy and atomic force microscopy. The results show that few-layer graphene can be deposited at 1000 °C using CH4 as a carbon precursor, and 5% H2, 95% N2 forming gas as a diluent. The effects of deposition temperature, deposition time, and forming gas addition on graphene film quality was studied experimentally. An increase in graphene quality was observed when forming gas was added during deposition.

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