scholarly journals Single Crystalline Mesoporous Silicon Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (10) ◽  
pp. 3550-3554 ◽  
Author(s):  
Allon I. Hochbaum ◽  
Daniel Gargas ◽  
Yun Jeong Hwang ◽  
Peidong Yang
Keyword(s):  
Silicon Nanowires ◽  
Mesoporous Silicon ◽  
Single Crystalline

Self-diffusion in single crystalline silicon nanowires

2018 ◽  
Vol 123 (16) ◽  
pp. 161515 ◽  
Author(s):  
T. Südkamp ◽  
G. Hamdana ◽  
M. Descoins ◽  
D. Mangelinck ◽  
H. S. Wasisto ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Self Diffusion

Direct Synthesis of Silicon Nanowires using Silane and Molten Gallium

2002 ◽  
Vol 737 ◽  
Author(s):  
Shashank Sharma ◽  
Mahendra K. Sunkara ◽  
Elizabeth C. Dickey
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Direct Synthesis ◽  
Growth Direction ◽  
Single Crystalline ◽  
Gas Phase Chemistry ◽  
Transmission Electron ◽  
Phase Chemistry ◽  
First Time ◽  
Low Solubility

ABSTRACTWe report for the first time, bulk synthesis of single crystalline silicon nanowires using molten gallium pools and an activated vapor phase containing silane. The resulting silicon nanowires were single crystalline with <100> growth direction. Nanowires contained an unexpectedly thin, non-uniform oxide sheath determined using high-resolution Transmission Electron Microscopy (TEM). Nanowires were tens of nanometers in diameter and tens to hundreds of microns long. The use of activated gas phase chemistry containing solute of interest over molten metal pools of low-solubility eutectics such as gallium offer a viable route to generate nanowire systems containing abrupt compositional hetero-interfaces.

Facile morphological control of single-crystalline silicon nanowires

2012 ◽  
Vol 258 (24) ◽  
pp. 9792-9799 ◽  
Author(s):  
Shao-long Wu ◽  
Ting Zhang ◽  
Rui-ting Zheng ◽  
Guo-an Cheng
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Morphological Control ◽  
Single Crystalline

Fluorescence signals of core–shell quantum dots enhanced by single crystalline gold caps on silicon nanowires

2009 ◽  
Vol 20 (16) ◽  
pp. 165301 ◽  
Author(s):  
S H Christiansen ◽  
J W Chou ◽  
M Becker ◽  
V Sivakov ◽  
K Ehrhold ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nanowires ◽  
Core Shell ◽  
Single Crystalline

scholarly journals Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Stefan Weidemann ◽  
Maximilian Kockert ◽  
Dirk Wallacher ◽  
Manfred Ramsteiner ◽  
Anna Mogilatenko ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Pore Formation ◽  
Gas Adsorption ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Phonon Confinement ◽  
Single Crystalline ◽  
Boron Doped ◽  
Doped Silicon

Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi  bulk=520 cm−1  →λSi  nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.

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