Nanostructured Gold Films for SERS by Block Copolymer-Templated Galvanic Displacement Reactions

Nano Letters ◽  
2009 ◽  
Vol 9 (6) ◽  
pp. 2384-2389 ◽  
Author(s):  
Yong Wang ◽  
Michael Becker ◽  
Li Wang ◽  
Jinquan Liu ◽  
Roland Scholz ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Gold Films ◽  
Galvanic Displacement ◽  
Displacement Reactions ◽  
Nanostructured Gold

Controlling the composition of plasmonic nanoparticle arrays via galvanic displacement reactions on block copolymer nanotemplates

2011 ◽  
Vol 47 (6) ◽  
pp. 1782-1784 ◽  
Author(s):  
Ji Yong Lee ◽  
Jieun Lee ◽  
Yu Jin Jang ◽  
Juyon Lee ◽  
Yoon Hee Jang ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Nanoparticle Arrays ◽  
Galvanic Displacement ◽  
Plasmonic Nanoparticle ◽  
Displacement Reactions

scholarly journals Oxide-oxide galvanic displacement reactions: Effect of the concentration of the ions released by the sacrificial oxide

2021 ◽  
Vol 896 ◽  
pp. 115199
Author(s):  
Nicola Comisso ◽  
Lidia Armelao ◽  
Sandro Cattarin ◽  
Stefano Fasolin ◽  
Luca Mattarozzi ◽  
...  
Keyword(s):  
Galvanic Displacement ◽  
Displacement Reactions

Micellar block copolymer templated galvanic displacement for epitaxial nanowire device integration

2011 ◽  
Vol 21 (24) ◽  
pp. 8807 ◽  
Author(s):  
Gregory S. Doerk ◽  
Charles Dhong ◽  
Christine Politi ◽  
Ian Laboriante ◽  
Carlo Carraro ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Galvanic Displacement ◽  
Device Integration ◽  
Nanowire Device

scholarly journals Plasmonic biosensors fabricated by galvanic displacement reactions for monitoring biomolecular interactions in real time

2020 ◽  
Vol 412 (14) ◽  
pp. 3433-3445 ◽  
Author(s):  
Claudia Pacholski ◽  
Sophia Rosencrantz ◽  
Ruben R. Rosencrantz ◽  
Ruth Fabiola Balderas-Valadez
Keyword(s):  
Real Time ◽  
Biomolecular Interactions ◽  
Galvanic Displacement ◽  
Displacement Reactions

scholarly journals Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
M. Mirigliano ◽  
S. Radice ◽  
A. Falqui ◽  
A. Casu ◽  
F. Cavaliere ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Temperature Coefficient ◽  
Resistive Switching ◽  
Electrical Conduction ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
High Density ◽  
Gold Films ◽  
Temperature Coefficient Of Resistance ◽  
Nanostructured Gold

AbstractWe report the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in nanostructured gold films above the electrical percolation and in strong-coupling regime, from room down to cryogenic temperatures (24 K). Nanostructured continuous gold films are assembled by supersonic cluster beam deposition of Au aggregates formed in the gas phase. The structure of the cluster-assembled films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries and with a large number of lattice defects. Our data indicates that space charge limited conduction and Coulomb blockade are at the origin of the anomalous electrical behavior. The high density of extended defects and grain boundaries causes the localization of conduction electrons over the entire investigated temperature range.

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