Direct Imaging of Rotational Stacking Faults in Few Layer Graphene

Nano Letters ◽  
2009 ◽  
Vol 9 (1) ◽  
pp. 102-106 ◽  
Author(s):  
Jamie H. Warner ◽  
Mark H. Rümmeli ◽  
Thomas Gemming ◽  
Bernd Büchner ◽  
G. Andrew D. Briggs
Keyword(s):  
Stacking Faults ◽  
Direct Imaging ◽  
Layer Graphene ◽  
Few Layer Graphene

scholarly journals Gas phase condensation of few-layer graphene with rotational stacking faults in an electric-arc

Carbon ◽  
2013 ◽  
Vol 55 ◽  
pp. 209-220 ◽  
Author(s):  
Soumen Karmakar ◽  
Ashok B. Nawale ◽  
Niranjan P. Lalla ◽  
Vasant G. Sathe ◽  
Sadhu K. Kolekar ◽  
...  
Keyword(s):  
Gas Phase ◽  
Stacking Faults ◽  
Electric Arc ◽  
Layer Graphene ◽  
Few Layer Graphene

Direct imaging of construction of carbon onions by curling few-layer graphene flakes

2018 ◽  
Vol 20 (3) ◽  
pp. 2022-2027 ◽  
Author(s):  
Meifen Li ◽  
Weiwei Liu ◽  
Haixia Zhang ◽  
Zhilu Liang ◽  
Pei Duan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Atomic Scale ◽  
Growth Stages ◽  
Direct Imaging ◽  
Layer Graphene ◽  
Graphene Flakes ◽  
Carbon Onions ◽  
Few Layer Graphene

Atomic-scale electron microscopy of carbon onions at intermediary growth stages suggests that carbon onions are constructed by few-layer graphene flakes.

scholarly journals Thermal transport across wrinkles in few-layer graphene stacks

2021 ◽  
Author(s):  
A. Mohapatra ◽  
S. Das ◽  
K. Majumdar ◽  
M. S. Ramachandra Rao ◽  
Manu Jaiswal
Keyword(s):  
Thermal Transport ◽  
Stacking Faults ◽  
Layer Graphene ◽  
Few Layer Graphene

Thermal transport is strongly influenced by wrinkles in films of few-layer graphene crystallites with rotational stacking faults, as revealed from Raman optothermal measurements.

Direct Imaging of Atomic-Scale Ripples in Few-Layer Graphene

Nano Letters ◽  
2012 ◽  
Vol 12 (5) ◽  
pp. 2278-2282 ◽  
Author(s):  
Wei L. Wang ◽  
Sagar Bhandari ◽  
Wei Yi ◽  
David C. Bell ◽  
Robert Westervelt ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Direct Imaging ◽  
Layer Graphene ◽  
Few Layer Graphene

scholarly journals Properties of Silicone Rubber-Based Composites Reinforced with Few-Layer Graphene and Iron Oxide or Titanium Dioxide

Polymers ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1550
Author(s):  
Vineet Kumar ◽  
Anuj Kumar ◽  
Minseok Song ◽  
Dong-Joo Lee ◽  
Sung-Soo Han ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Titanium Dioxide ◽  
Iron Oxide ◽  
Stress Relaxation ◽  
Silicone Rubber ◽  
Room Temperature ◽  
Relaxation Rates ◽  
Layer Graphene ◽  
Few Layer Graphene ◽  
Mechanical Actuation

The increasing demand for polymer composites with novel or improved properties requires novel fillers. To meet the challenges posed, nanofillers such as graphene, carbon nanotubes, and titanium dioxide (TiO2) have been used. In the present work, few-layer graphene (FLG) and iron oxide (Fe3O4) or TiO2 were used as fillers in a room-temperature-vulcanized (RTV) silicone rubber (SR) matrix. Composites were prepared by mixing RTV-SR with nanofillers and then kept for vulcanization at room temperature for 24 h. The RTV-SR composites obtained were characterized with respect to their mechanical, actuation, and magnetic properties. Fourier-transform infrared spectroscopy (FTIR) analysis was performed to investigate the composite raw materials and finished composites, and X-ray photoelectron spectroscopy (XPS) analysis was used to study composite surface elemental compositions. Results showed that mechanical properties were improved by adding fillers, and actuation displacements were dependent on the type of nanofiller used and the applied voltage. Magnetic stress-relaxation also increased with filler amount and stress-relaxation rates decreased when a magnetic field was applied parallel to the deformation axes. Thus, this study showed that the inclusion of iron oxide (Fe3O4) or TiO2 fillers in RTV-SR improves mechanical, actuation, and magnetic properties.

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

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