Weak Antilocalization Effect of Topological Crystalline Insulator Pb1–xSnxTe Nanowires with Tunable Composition and Distinct {100} Facets

Nano Letters ◽  
2015 ◽  
Vol 15 (4) ◽  
pp. 2485-2490 ◽  
Author(s):  
Muhammad Safdar ◽  
Qisheng Wang ◽  
Zhenxing Wang ◽  
Xueying Zhan ◽  
Kai Xu ◽  
...  
Keyword(s):  
Weak Antilocalization ◽  
Topological Crystalline Insulator

scholarly journals Weak antilocalization in topological crystalline insulator SnTe films deposited using amorphous seeding on SrTiO3

APL Materials ◽  
2021 ◽  
Vol 9 (11) ◽  
pp. 111106
Author(s):  
Stephen D. Albright ◽  
Ke Zou ◽  
Frederick J. Walker ◽  
Charles H. Ahn
Keyword(s):  
Weak Antilocalization ◽  
Topological Crystalline Insulator

scholarly journals Magnetic crystalline-symmetry-protected axion electrodynamics and field-tunable unpinned Dirac cones in EuIn2As2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. X. M. Riberolles ◽  
T. V. Trevisan ◽  
B. Kuthanazhi ◽  
T. W. Heitmann ◽  
F. Ye ◽  
...  
Keyword(s):  
Density Functional ◽  
Surface States ◽  
Antiferromagnetic Order ◽  
Functional Theory ◽  
Magnetic Symmetry ◽  
Integer Quantum ◽  
Symmetry Protected ◽  
Topological Crystalline Insulator ◽  
Low Symmetry ◽  
Crystalline Symmetry

AbstractKnowledge of magnetic symmetry is vital for exploiting nontrivial surface states of magnetic topological materials. EuIn2As2 is an excellent example, as it is predicted to have collinear antiferromagnetic order where the magnetic moment direction determines either a topological-crystalline-insulator phase supporting axion electrodynamics or a higher-order-topological-insulator phase with chiral hinge states. Here, we use neutron diffraction, symmetry analysis, and density functional theory results to demonstrate that EuIn2As2 actually exhibits low-symmetry helical antiferromagnetic order which makes it a stoichiometric magnetic topological-crystalline axion insulator protected by the combination of a 180∘ rotation and time-reversal symmetries: $${C}_{2}\times {\mathcal{T}}={2}^{\prime}$$ C 2 × T = 2 ′ . Surfaces protected by $${2}^{\prime}$$ 2 ′ are expected to have an exotic gapless Dirac cone which is unpinned to specific crystal momenta. All other surfaces have gapped Dirac cones and exhibit half-integer quantum anomalous Hall conductivity. We predict that the direction of a modest applied magnetic field of μ0H ≈ 1 to 2 T can tune between gapless and gapped surface states.

scholarly journals Systematic Investigation of the Coupling between One-Dimensional Edge States of a Topological Crystalline Insulator

2021 ◽  
Vol 126 (23) ◽  
Author(s):  
Johannes Jung ◽  
Artem Odobesko ◽  
Robin Boshuis ◽  
Andrzej Szczerbakow ◽  
Tomasz Story ◽  
...  
Keyword(s):  
Systematic Investigation ◽  
Edge States ◽  
One Dimensional ◽  
Topological Crystalline Insulator

scholarly journals Electron-electron interactions and weak antilocalization in few-layer ZrTe5 devices

2021 ◽  
Vol 103 (15) ◽  
Author(s):  
Zhijian Xie ◽  
Xinjian Wei ◽  
Shimin Cao ◽  
Yu Zhang ◽  
Shili Yan ◽  
...  
Keyword(s):  
Weak Antilocalization ◽  
Electron Interactions

scholarly journals Pure spin photocurrent in non-centrosymmetric crystals: bulk spin photovoltaic effect

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Haowei Xu ◽  
Hua Wang ◽  
Jian Zhou ◽  
Ju Li
Keyword(s):  
Mirror Symmetry ◽  
Photovoltaic Effect ◽  
Transition Metal Dichalcogenides ◽  
Spin Current ◽  
Pure Spin ◽  
Light Illumination ◽  
Metal Dichalcogenides ◽  
Critical Components ◽  
Topological Crystalline Insulator

AbstractSpin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time $$\tau$$ τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi2Te4, and the surface of topological crystalline insulator cubic SnTe.

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