Plasmonic Color Filters for CMOS Image Sensor Applications

Nano Letters ◽  
2012 ◽  
Vol 12 (8) ◽  
pp. 4349-4354 ◽  
Author(s):  
Sozo Yokogawa ◽  
Stanley P. Burgos ◽  
Harry A. Atwater
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Applications ◽  
Color Filters

scholarly journals Visible Wavelength Color Filters Using Dielectric Subwavelength Gratings for Backside-Illuminated CMOS Image Sensor Technologies

Nano Letters ◽  
2017 ◽  
Vol 17 (5) ◽  
pp. 3159-3164 ◽  
Author(s):  
Yu Horie ◽  
Seunghoon Han ◽  
Jeong-Yub Lee ◽  
Jaekwan Kim ◽  
Yongsung Kim ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Visible Wavelength ◽  
Subwavelength Gratings ◽  
Color Filters ◽  
Backside Illuminated

scholarly journals Absorptive metasurface color filters based on hyperbolic metamaterials for a CMOS image sensor

2021 ◽  
Vol 29 (3) ◽  
pp. 3643
Author(s):  
Jongwoo Hong ◽  
Hyunwoo Son ◽  
Changhyun Kim ◽  
Sang-Eun Mun ◽  
Jangwoon Sung ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Hyperbolic Metamaterials ◽  
Color Filters

scholarly journals Efficiency enhancement in a backside illuminated 112 μm pixel CMOS image sensor via parabolic color filters

2016 ◽  
Vol 24 (14) ◽  
pp. 16027 ◽  
Author(s):  
Jong-Kwon Lee ◽  
Ahreum Kim ◽  
Dong-Wan Kang ◽  
Byung Yang Lee
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Efficiency Enhancement ◽  
Color Filters ◽  
Backside Illuminated

An 8-bit column-shared SAR ADC for CMOS image sensor applications

2015 ◽  
Author(s):  
Jin-Yi Lin ◽  
Kwuang-Han Chang ◽  
Chen-Che Kao ◽  
Shih-Chin Lo ◽  
Yan-Jiun Chen ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sar Adc ◽  
Sensor Applications

scholarly journals Color filters including infrared cut-off integrated on CMOS image sensor

2011 ◽  
Vol 19 (14) ◽  
pp. 13073 ◽  
Author(s):  
Laurent Frey ◽  
Pascale Parrein ◽  
Jacques Raby ◽  
Catherine Pellé ◽  
Didier Hérault ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Color Filters

scholarly journals Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications

Sensors ◽  
2020 ◽  
Vol 20 (3) ◽  
pp. 727
Author(s):  
Francois Roy ◽  
Andrej Suler ◽  
Thomas Dalleau ◽  
Romain Duru ◽  
Daniel Benoit ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Deep Trench ◽  
Fully Depleted ◽  
Sensor Applications ◽  
Temporal Noise

Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge storage, and charge transfer to the sensing node. To prove this concept, a backside illumination (BSI), p-type, 2-µm-pitch pixel was designed. It integrates a vertical pinned photo gate (PPG), a buried vertical transfer gate (TG), sidewall capacitive deep trench isolation (CDTI), and backside oxide–nitride–oxide (ONO) stack. The designed pixel was fabricated with variations of key parameters for optimization. Testing results showed the following achievements: 13,000 h+ full-well capacity with no lag for charge transfer, 80% quantum efficiency (QE) at 550-nm wavelength, 5 h+/s dark current at 60 °C, 2 h+ temporal noise floor, and 75 dB dynamic range. In comparison with conventional pixel design, the proposed concept could improve CIS performance.

Fabrication of VTPC-TG Pixels for 3D Structure CMOS Image Sensor Applications

2017 ◽  
Author(s):  
S.-K. Park ◽  
D. Woo ◽  
M.-K. Na ◽  
P.-S. Kwag ◽  
H.-R. Lee ◽  
...  
Keyword(s):  
3D Structure ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Applications

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Sign in / Sign up

Export Citation Format

Share Document