scholarly journals Spin Relaxation in Single-Layer Graphene with Tunable Mobility

Nano Letters ◽  
2012 ◽  
Vol 12 (7) ◽  
pp. 3443-3447 ◽  
Author(s):  
Wei Han ◽  
Jen-Ru Chen ◽  
Deqi Wang ◽  
Kathleen M. McCreary ◽  
Hua Wen ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene

scholarly journals Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

2016 ◽  
Vol 109 (12) ◽  
pp. 122411 ◽  
Author(s):  
Simranjeet Singh ◽  
Jyoti Katoch ◽  
Jinsong Xu ◽  
Cheng Tan ◽  
Tiancong Zhu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Spin Relaxation ◽  
Hexagonal Boron Nitride ◽  
Relaxation Times ◽  
Single Layer ◽  
Spin Valves ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Tunnel Barriers

Comparative study of electron transfer on various graphene-metallic contacts

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Single Layer ◽  
Annealing Treatment ◽  
Single Layer Graphene ◽  
Strain Effect ◽  
Graphene Surface ◽  
Layer Graphene ◽  
Metallic Contacts ◽  
Nonuniform Strain ◽  
Main Factor

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

Sign in / Sign up

Export Citation Format

Share Document