Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells
2016 ◽
Vol 220
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pp. 169-175
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2014 ◽
Vol 31
(9)
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pp. 098401
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2010 ◽
Vol 1
(10)
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pp. 1611-1615
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