Metamaterial-Plasmonic Absorber Structure for High Efficiency Amorphous Silicon Solar Cells

Nano Letters ◽  
2011 ◽  
Vol 12 (1) ◽  
pp. 440-445 ◽  
Author(s):  
Yang Wang ◽  
Tianyi Sun ◽  
Trilochan Paudel ◽  
Yi Zhang ◽  
Zhifeng Ren ◽  
...  
1991 ◽  
Vol 30 (Part 1, No. 8) ◽  
pp. 1635-1640 ◽  
Author(s):  
Katsuhiko Higuchi ◽  
Katsuya Tabuchi ◽  
Koeng Su Lim ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

2019 ◽  
Vol 27 (12) ◽  
pp. 1104-1114 ◽  
Author(s):  
HyunJung Park ◽  
Youngseok Lee ◽  
Se Jin Park ◽  
Soohyun Bae ◽  
Sangho Kim ◽  
...  

1991 ◽  
Vol 23 (2-4) ◽  
pp. 227-238 ◽  
Author(s):  
Hisaki Tarui ◽  
Yasuo Kishi ◽  
Noboru Nakamura ◽  
Masato Nishikuni ◽  
Makoto Tanaka ◽  
...  

2012 ◽  
Vol 98 ◽  
pp. 277-282 ◽  
Author(s):  
Jung Y. Huang ◽  
Chien Y. Lin ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
Bau-Tong Dai

2013 ◽  
Vol 750-752 ◽  
pp. 970-973
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun

High-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.


1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 4983-4988 ◽  
Author(s):  
Baosheng Sang ◽  
Koji Dairiki ◽  
Akira Yamada ◽  
Makoto Konagai

2011 ◽  
Vol 95 (9) ◽  
pp. 2659-2663 ◽  
Author(s):  
Ping-Kuan Chang ◽  
Po-Tsung Hsieh ◽  
Chun-Hsiung Lu ◽  
Chih-Hung Yeh ◽  
Mau-Phon Houng

2014 ◽  
Vol 1666 ◽  
Author(s):  
Takuya Matsui ◽  
Adrien Bidiville ◽  
Hitoshi Sai ◽  
Takashi Suezaki ◽  
Mitsuhiro Matsumoto ◽  
...  

ABSTRACTWe show that high-efficiency and low-degradation hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells can be obtained by depositing absorber layers in a triode-type plasma-enhanced chemical vapor deposition (PECVD) process. Although the deposition rate is relatively low (0.01-0.03 nm/s) compared to the conventional diode-type PECVD process (∼0.2 nm/s), the light-induced degradation in conversion efficiency of single-junction solar cell is substantially reduced (Δη/ηini∼10%) due to the suppression of light-induced metastable defects in the a-Si:H absorber layer. So far, we have attained an independently-confirmed stabilized efficiency of 10.11% for a 220-nm-thick a-Si:H solar cell which was light soaked under 1 sun illumination for 1000 hours at cell temperature of 50°C. We further demonstrate that stabilized efficiencies as high as 10% can be maintained even when the solar cell is thickened to >300 nm.


Sign in / Sign up

Export Citation Format

Share Document