scholarly journals High-Resolution Studies of Domain Switching Behavior in Nanostructured Ferroelectric Polymers

Nano Letters ◽  
2011 ◽  
Vol 11 (5) ◽  
pp. 1970-1975 ◽  
Author(s):  
Pankaj Sharma ◽  
Timothy J. Reece ◽  
Stephen Ducharme ◽  
Alexei Gruverman
Keyword(s):  
High Resolution ◽  
Domain Switching ◽  
Switching Behavior ◽  
Ferroelectric Polymers

High Resolution Study of Permanent Photoinduced Reflectivity Changes and Charge-Order Domain Switching inBi0.3Ca0.7MnO3

2001 ◽  
Vol 87 (12) ◽  
Author(s):  
I. I. Smolyaninov ◽  
V. N. Smolyaninova ◽  
C. C. Davis ◽  
B.-G. Kim ◽  
S.-W. Cheong ◽  
...  
Keyword(s):  
High Resolution ◽  
Domain Switching ◽  
Charge Order ◽  
Order Domain ◽  
Resolution Study

Loading Rate Effect on the Domain Switching of Ferroelectric Materials

2008 ◽  
Author(s):  
Ajit Achuthan ◽  
Chin-Teh Sun
Keyword(s):  
Electric Field ◽  
Loading Rate ◽  
Domain Switching ◽  
Underlying Mechanism ◽  
Ferroelectric Materials ◽  
Switching Behavior ◽  
Switching Mechanism ◽  
Two Factors ◽  
Different Characteristics ◽  
Butterfly Behavior

A method to characterize the strain electric field butterfly behavior based on the underlying domain switching mechanism is presented at first. The effect of loading rate on the different characteristics of the strain electric-field-butterfly behavior is then studied. By comparing the changes in these characteristics under different loading rates, it is established that the loading rate dependence of the strain electric field butterfly behavior is mainly due to two factors, 1) the dependence of the switching of individual domains on the magnitude and duration of the loading time and 2) the variation of the transition electric field with the loading rate. Several interesting attributes of the domain switching behavior that may shed light on understanding the underlying mechanism of domain switching further is illustrated in the present study. The present study also demonstrates that the method of characterizing the strain electric butterfly based on the underlying domain switching mechanism is very effective in studying ferroelectric behavior under different loading conditions.

Understanding, Predicting, and Designing Ferroelectric Domain Structures and Switching Guided by the Phase-Field Method

2019 ◽  
Vol 49 (1) ◽  
pp. 127-152 ◽  
Author(s):  
Jian-Jun Wang ◽  
Bo Wang ◽  
Long-Qing Chen
Keyword(s):  
Phase Field ◽  
Domain Switching ◽  
Field Method ◽  
Ferroelectric Domain ◽  
Switching Behavior ◽  
Phase Field Method ◽  
Local Domain ◽  
Mechanical Stimuli ◽  
Structure Property ◽  
Domain Structures

Understanding mesoscale ferroelectric domain structures and their switching behavior under external fields is critical to applications of ferroelectrics. The phase-field method has been established as a powerful tool for probing, predicting, and designing the formation of domain structures under different electromechanical boundary conditions and their switching behavior under electric and/or mechanical stimuli. Here we review the basic framework of the phase-field model of ferroelectrics and its applications to simulating domain formation in bulk crystals, thin films, superlattices, and nanostructured ferroelectrics and to understanding macroscopic and local domain switching under electrical and/or mechanical fields. We discuss the possibility of utilizing the structure-property relationship learned from phase-field simulations to design high-performance relaxor piezoelectrics and electrically tunable thermal conductivity. The review ends with a summary of and an outlook on the potential new applications of the phase-field method of ferroelectrics.

scholarly journals Giant tuning of ferroelectricity in single crystals by thickness engineering

2020 ◽  
Vol 6 (42) ◽  
pp. eabc7156
Author(s):  
Zibin Chen ◽  
Fei Li ◽  
Qianwei Huang ◽  
Fei Liu ◽  
Feifei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Single Crystals ◽  
Domain Switching ◽  
Ferroelectric Properties ◽  
Strain Engineering ◽  
Sample Thickness ◽  
Surface Strain ◽  
Switching Behavior ◽  
Thickness Effect

Thickness effect and mechanical tuning behavior such as strain engineering in thin-film ferroelectrics have been extensively studied and widely used to tailor the ferroelectric properties. However, this is never the case in freestanding single crystals, and conclusions from thin films cannot be duplicated because of the differences in the nature and boundary conditions of the thin-film and freestanding single-crystal ferroelectrics. Here, using in situ biasing transmission electron microscopy, we studied the thickness-dependent domain switching behavior and predicted the trend of ferroelectricity in nanoscale materials induced by surface strain. We discovered that sample thickness plays a critical role in tailoring the domain switching behavior and ferroelectric properties of single-crystal ferroelectrics, arising from the huge surface strain and the resulting surface reconstruction. Our results provide important insights in tuning polarization/domain of single-crystal ferroelectric via sample thickness engineering.

High-resolution structural mapping and single-domain switching kinetics in 2D-confined ferroelectric nanodots for low-power FeRAM

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11997-12006 ◽  
Author(s):  
Yingxin Chen ◽  
Minhui Xu ◽  
Xin Hu ◽  
Yifeng Yue ◽  
Xuefeng Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Power ◽  
Domain Switching ◽  
Single Domain ◽  
Structural Mapping ◽  
Kinetics Of

2D-confined P(VDF-TrFE) nanodots with well-orientation crystals have been fabricated by the nano-imprinting lithography, and the structural maps and domain switching kinetics of P(VDF-TrFE) nanodots were characterized by AFM-based technology.

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