Electric Field Dependent Photocurrent Decay Length in Single Lead Sulfide Nanowire Field Effect Transistors

Rion Graham; Chris Miller; Eunsoon Oh; Dong Yu

doi:10.1021/nl1038456

Electric Field Dependent Photocurrent Decay Length in Single Lead Sulfide Nanowire Field Effect Transistors

Nano Letters ◽

10.1021/nl1038456 ◽

2011 ◽

Vol 11 (2) ◽

pp. 717-722 ◽

Cited By ~ 70

Author(s):

Rion Graham ◽

Chris Miller ◽

Eunsoon Oh ◽

Dong Yu

Keyword(s):

Electric Field ◽

Lead Sulfide ◽

Field Effect ◽

Field Effect Transistors ◽

Decay Length ◽

Field Dependent ◽

Photocurrent Decay

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Electric field dependent activation energy of electron transport in fullerene diodes and field effect transistors: Gill’s law

Applied Physics Letters ◽

10.1063/1.3557503 ◽

2011 ◽

Vol 98 (9) ◽

pp. 092114 ◽

Cited By ~ 32

Author(s):

A. Pivrikas ◽

Mujeeb Ullah ◽

H. Sitter ◽

N. S. Sariciftci

Keyword(s):

Activation Energy ◽

Electron Transport ◽

Electric Field ◽

Field Effect ◽

Field Effect Transistors ◽

Field Dependent

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Influence of Electric Field on Microstructures of Pentacene Thin-Films in Field-Effect Transistors

Advanced Functional Materials ◽

10.1002/adfm.200700912 ◽

2008 ◽

Vol 18 (2) ◽

pp. 285-293 ◽

Cited By ~ 53

Author(s):

H. L. Cheng ◽

W. Y. Chou ◽

C. W. Kuo ◽

Y. W. Wang ◽

Y. S. Mai ◽

...

Keyword(s):

Thin Films ◽

Electric Field ◽

Field Effect ◽

Field Effect Transistors

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Probing a two-step channel formation process in injection-type pentacene field-effect transistors by time-resolved electric-field-induced optical second-harmonic generation measurement

Organic Electronics ◽

10.1016/j.orgel.2012.08.030 ◽

2012 ◽

Vol 13 (12) ◽

pp. 2801-2806 ◽

Cited By ~ 4

Author(s):

Dai Taguchi ◽

Hiroshi Masada ◽

Takaaki Manaka ◽

Mitsumasa Iwamoto ◽

Takao Nishiura ◽

...

Keyword(s):

Electric Field ◽

Harmonic Generation ◽

Formation Process ◽

Field Effect ◽

Field Effect Transistors ◽

Second Harmonic ◽

Channel Formation ◽

Time Resolved ◽

Injection Type ◽

Second Harmonic Generation Measurement

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Lead Sulfide: Tailoring the Height of Ultrathin PbS Nanosheets and Their Application as Field-Effect Transistors (Small 7/2015)

Small ◽

10.1002/smll.201570044 ◽

2015 ◽

Vol 11 (7) ◽

pp. 888-888

Author(s):

Thomas Bielewicz ◽

Sedat Dogan ◽

Christian Klinke

Keyword(s):

Lead Sulfide ◽

Field Effect ◽

Field Effect Transistors

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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/23/4/047201 ◽

2014 ◽

Vol 23 (4) ◽

pp. 047201

Author(s):

Ying-Xia Yu ◽

Zhao-Jun Lin ◽

Chong-Biao Luan ◽

Yuan-Jie Lü ◽

Zhi-Hong Feng ◽

...

Keyword(s):

Electric Field ◽

Field Distribution ◽

Field Effect ◽

Electric Field Distribution ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Nonvolatile magneto-electric field effect transistors for spintronic memory and logic

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2018.8403869 ◽

2018 ◽

Cited By ~ 1

Author(s):

Peter A. Dowben ◽

Christian Binek ◽

Dmitri Nikonov

Keyword(s):

Electric Field ◽

Field Effect ◽

Field Effect Transistors ◽

Electric Field Effect

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Trapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS2 field-effect transistors

Nano Futures ◽

10.1088/2399-1984/aafc3a ◽

2019 ◽

Vol 3 (1) ◽

pp. 011002 ◽

Cited By ~ 1

Author(s):

Jinsu Pak ◽

Kyungjune Cho ◽

Jae-Keun Kim ◽

Yeonsik Jang ◽

Jiwon Shin ◽

...

Keyword(s):

Electric Field ◽

Field Effect ◽

Field Effect Transistors ◽

Lateral Electric Field ◽

Charge Modulation ◽

Trapped Charge

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Modulating the Linker Immobilization Density on Aptameric Graphene Field Effect Transistors Using an Electric Field

ACS Sensors ◽

10.1021/acssensors.0c00752 ◽

2020 ◽

Vol 5 (8) ◽

pp. 2503-2513 ◽

Cited By ~ 2

Author(s):

Zhuang Hao ◽

Yunlu Pan ◽

Cong Huang ◽

Ziran Wang ◽

Qiao Lin ◽

...

Keyword(s):

Electric Field ◽

Field Effect ◽

Field Effect Transistors

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Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Applied Physics Letters ◽

10.1063/1.4821546 ◽

2013 ◽

Vol 103 (12) ◽

pp. 122106 ◽

Cited By ~ 20

Author(s):

Keisuke Yamamoto ◽

Takahiro Sada ◽

Dong Wang ◽

Hiroshi Nakashima

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Metal Source

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Mobility Measurement Based on Visualized Electric Field Migration in Organic Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.2.061501 ◽

2009 ◽

Vol 2 ◽

pp. 061501 ◽

Cited By ~ 8

Author(s):

Takaaki Manaka ◽

Fei Liu ◽

Martin Weis ◽

Mitsumasa Iwamoto

Keyword(s):

Electric Field ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Mobility Measurement

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