Electric Field Induced Removal of the Biexciton Binding Energy in a Single Quantum Dot

Nano Letters ◽  
2011 ◽  
Vol 11 (2) ◽  
pp. 645-650 ◽  
Author(s):  
Michael E. Reimer ◽  
Maarten P. van Kouwen ◽  
Anne W. Hidma ◽  
Maarten H. M. van Weert ◽  
Erik P. A. M. Bakkers ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Single Quantum ◽  
Biexciton Binding Energy ◽  
Single Quantum Dot

Manipulating single quantum dot states in a lateral electric field

2002 ◽  
Vol 13 (2-4) ◽  
pp. 147-150 ◽  
Author(s):  
J Seufert ◽  
M Obert ◽  
M Rambach ◽  
G Bacher ◽  
A Forchel ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Single Quantum ◽  
Lateral Electric Field ◽  
Single Quantum Dot

Prepositioned single quantum dot in a lateral electric field

2008 ◽  
Vol 78 (19) ◽  
Author(s):  
M. E. Reimer ◽  
M. Korkusiński ◽  
D. Dalacu ◽  
J. Lefebvre ◽  
J. Lapointe ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Single Quantum ◽  
Lateral Electric Field ◽  
Single Quantum Dot

scholarly journals Electric-field-induced coherent coupling of the exciton states in a single quantum dot

2010 ◽  
Vol 6 (12) ◽  
pp. 947-950 ◽  
Author(s):  
A. J. Bennett ◽  
M. A. Pooley ◽  
R. M. Stevenson ◽  
M. B. Ward ◽  
R. B. Patel ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Field ◽  
Single Quantum ◽  
Coherent Coupling ◽  
Single Quantum Dot

EFFECT OF APPLIED ELECTRIC FIELD ON ACCEPTOR STATES IN ZINC-BLENDE InGaN/GaN QUANTUM DOT

2011 ◽  
Vol 25 (28) ◽  
pp. 2193-2201
Author(s):  
YINGNAI WEI ◽  
C. X. XIA ◽  
Y. M. LIU ◽  
Z. P. ZENG ◽  
S. Y. WEI
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Applied Electric Field ◽  
Asymmetric Distribution ◽  
Left Boundary ◽  
Mass Approximation ◽  
Zinc Blende ◽  
Single Quantum Dot ◽  
Acceptor Binding Energy

Based on the effective-mass approximation, the acceptor binding energy in a cylindrical zinc-blende (ZB) InGaN / GaN single quantum dot (QD) is investigated variationally in the presence of the applied electric field. Numerical results show that the acceptor binding energy is highly dependent on the applied electric field, impurity positions and QD size. The applied electric field also induces an asymmetric distribution of the acceptor binding energy with respect to the center of the QD. Moreover, in the presence of the applied electric field, the acceptor binding energy is insensitive to dot height when the impurity is located at the left boundary of the ZB In 0.1 Ga 0.9 N / GaN QD with large dot height (H≥6 nm). In particular, the acceptor binding energy of the impurity located at the left boundary of the ZB In 0.1 Ga 0.9 N / GaN QD is identical for different dot height when the applied electric field F≥350 KV/cm. This result can be of interest for the technological purpose, as it could involve a source of control some impurity-related properties in these systems under the applied electric field.

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