Effects of Gold Diffusion on n-Type Doping of GaAs Nanowires

Nano Letters ◽  
2010 ◽  
Vol 10 (11) ◽  
pp. 4584-4589 ◽  
Author(s):  
Michael J. Tambe ◽  
Shenqiang Ren ◽  
Silvija Gradečak
Keyword(s):  
Gaas Nanowires ◽  
Gold Diffusion

Comments on “gold diffusion and bulk vacancy generation in silicon”, by J. L. Lambert

1971 ◽  
Vol 5 (3) ◽  
pp. K213-K215
Author(s):  
F. A. Huntley ◽  
A. F. W. Willoughby
Keyword(s):  
Vacancy Generation ◽  
Gold Diffusion

scholarly journals Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering

2021 ◽  
pp. 2104671
Author(s):  
Bin Zhang ◽  
Jan E. Stehr ◽  
Ping‐Ping Chen ◽  
Xingjun Wang ◽  
Fumitaro Ishikawa ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Gaas Nanowires ◽  
Structure Engineering

scholarly journals Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii
Keyword(s):  
Surface Energy ◽  
Continuous Process ◽  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Monolayer Growth ◽  
Surface Energetics ◽  
Monolayer Expansion ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

Kinetics of Au–Ga Droplet Mediated Decomposition of GaAs Nanowires

Nano Letters ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 3498-3504 ◽  
Author(s):  
Marcus Tornberg ◽  
Daniel Jacobsson ◽  
Axel R. Persson ◽  
Reine Wallenberg ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Gaas Nanowires ◽  
Kinetics Of

scholarly journals Field Emission from Self-Catalyzed GaAs Nanowires

Nanomaterials ◽  
2017 ◽  
Vol 7 (9) ◽  
pp. 275 ◽  
Author(s):  
Filippo Giubileo ◽  
Antonio Di Bartolomeo ◽  
Laura Iemmo ◽  
Giuseppe Luongo ◽  
Maurizio Passacantando ◽  
...  
Keyword(s):  
Field Emission ◽  
Gaas Nanowires

Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism

2011 ◽  
Vol 99 (8) ◽  
pp. 083114 ◽  
Author(s):  
Ning Han ◽  
Alvin T. Hui ◽  
Fengyun Wang ◽  
Jared J. Hou ◽  
Fei Xiu ◽  
...  
Keyword(s):  
Orientation Dependence ◽  
Crystal Phase ◽  
Growth Orientation ◽  
Gaas Nanowires

Light-enhanced gold diffusion in silicon

1974 ◽  
Vol 25 (2) ◽  
pp. K133-K136 ◽  
Author(s):  
P. Z. Borukhovich ◽  
A. E. Kiv ◽  
V. I. Kimarskii ◽  
A. I. Koifman ◽  
O. R. Niyazova
Keyword(s):  
Gold Diffusion

Fast Growth Synthesis of GaAs Nanowires with Exceptional Length

Nano Letters ◽  
2010 ◽  
Vol 10 (5) ◽  
pp. 1836-1841 ◽  
Author(s):  
M. R. Ramdani ◽  
E. Gil ◽  
Ch. Leroux ◽  
Y. André ◽  
A. Trassoudaine ◽  
...  
Keyword(s):  
Fast Growth ◽  
Gaas Nanowires
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