Nanophase Evolution at Semiconductor/Electrolyte Interface in Situ Probed by Time-Resolved High-Energy Synchrotron X-ray Diffraction

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3747-3753 ◽  
Author(s):  
Yugang Sun ◽  
Yang Ren ◽  
Dean R. Haeffner ◽  
Jonathan D. Almer ◽  
Lin Wang ◽  
...  
2016 ◽  
Vol 52 (96) ◽  
pp. 13865-13868 ◽  
Author(s):  
Saul J. Moorhouse ◽  
Yue Wu ◽  
Hannah C. Buckley ◽  
Dermot O'Hare

We report the first use of high-energy monochromatic in situ X-ray powder diffraction to gain unprecedented insights into the chemical processes occurring during high temperature, lab-scale metal oxide syntheses.


2021 ◽  
Vol 52 (5) ◽  
pp. 1812-1825
Author(s):  
Sen Lin ◽  
Ulrika Borggren ◽  
Andreas Stark ◽  
Annika Borgenstam ◽  
Wangzhong Mu ◽  
...  

AbstractIn-situ high-energy X-ray diffraction experiments with high temporal resolution during rapid cooling (280 °C s−1) and isothermal heat treatments (at 450 °C, 500 °C, and 550 °C for 30 minutes) were performed to study austenite decomposition in two commercial high-strength low-alloy steels. The rapid phase transformations occurring in these types of steels are investigated for the first time in-situ, aiding a detailed analysis of the austenite decomposition kinetics. For the low hardenability steel with main composition Fe-0.08C-1.7Mn-0.403Si-0.303Cr in weight percent, austenite decomposition to polygonal ferrite and bainite occurs already during the initial cooling. However, for the high hardenability steel with main composition Fe-0.08C-1.79Mn-0.182Si-0.757Cr-0.094Mo in weight percent, the austenite decomposition kinetics is retarded, chiefly by the Mo addition, and therefore mainly bainitic transformation occurs during isothermal holding; the bainitic transformation rate at the isothermal holding is clearly enhanced by lowered temperature from 550 °C to 500 °C and 450 °C. During prolonged isothermal holding, carbide formation leads to decreased austenite carbon content and promotes continued bainitic ferrite formation. Moreover, at prolonged isothermal holding at higher temperatures some degenerate pearlite form.


2021 ◽  
Vol 800 ◽  
pp. 140249
Author(s):  
Juan Macchi ◽  
Steve Gaudez ◽  
Guillaume Geandier ◽  
Julien Teixeira ◽  
Sabine Denis ◽  
...  

2010 ◽  
Vol 504 ◽  
pp. S155-S158 ◽  
Author(s):  
J. Bednarcik ◽  
C. Curfs ◽  
M. Sikorski ◽  
H. Franz ◽  
J.Z. Jiang

Carbon ◽  
2015 ◽  
Vol 87 ◽  
pp. 246-256 ◽  
Author(s):  
Périne Landois ◽  
Mathieu Pinault ◽  
Stéphan Rouzière ◽  
Dominique Porterat ◽  
Cristian Mocuta ◽  
...  

2011 ◽  
Vol 21 (15) ◽  
pp. 5604 ◽  
Author(s):  
Zonghai Chen ◽  
Yang Ren ◽  
Yan Qin ◽  
Huiming Wu ◽  
Shengqian Ma ◽  
...  

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.


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