High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3464-3466 ◽  
Author(s):  
Beom Joon Kim ◽  
Houk Jang ◽  
Seoung-Ki Lee ◽  
Byung Hee Hong ◽  
Jong-Hyun Ahn ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Ion Gel

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters

2019 ◽  
Vol 7 (20) ◽  
pp. 6022-6033 ◽  
Author(s):  
Emanuela Pompei ◽  
Claudio Turchetti ◽  
Shino Hamao ◽  
Akari Miura ◽  
Hidenori Goto ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Plastic Substrates

The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used as gate dielectrics, respectively.

High-performance CdS nanobelt field-effect transistors with high-κ HfO2 top-gate dielectrics

2009 ◽  
Vol 19 (15) ◽  
pp. 2125 ◽  
Author(s):  
P. C. Wu ◽  
R. M. Ma ◽  
C. Liu ◽  
T. Sun ◽  
Y. Ye ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors

Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics

2019 ◽  
Vol 7 (14) ◽  
pp. 4004-4012 ◽  
Author(s):  
Fan Zhang ◽  
Huaye Zhang ◽  
Lijie Zhu ◽  
Liang Qin ◽  
Yue Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Dielectric Layers ◽  
Hybrid Perovskite ◽  
Bottom Gate

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.

A Transparent Cyanated Polyimide Gate Dielectrics for High Performance Organic Field-Effect Transistors

Polymer Korea ◽  
2019 ◽  
Vol 43 (1) ◽  
pp. 38-45
Author(s):  
Yonghwa Baek ◽  
Xinlin Li ◽  
Prerna Chaudhary ◽  
Chan Eon Park ◽  
Sung Soo Han ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Faruk Altan Yildirim ◽  
Ronald Meixner ◽  
Robert Roman Schliewe ◽  
Wolfgang Bauhofer ◽  
Holger Goebel ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Volume Resistivity ◽  
Dielectric Materials ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Metal Insulator Metal

ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

scholarly journals Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

RSC Advances ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 3169-3175 ◽  
Author(s):  
Han Sol Back ◽  
Min Je Kim ◽  
Jeong Ju Baek ◽  
Do Hwan Kim ◽  
Gyojic Shin ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Logic Gates ◽  
Organic Field Effect Transistors ◽  
High Quality ◽  
Complementary Inverters

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.

High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

2007 ◽  
Vol 8 (6) ◽  
pp. 718-726 ◽  
Author(s):  
Xiao-Hong Zhang ◽  
Benoit Domercq ◽  
Xudong Wang ◽  
Seunghyup Yoo ◽  
Takeshi Kondo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Layer Deposition
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