Detection of Spin Polarized Carrier in Silicon Nanowire with Single Crystal MnSi as Magnetic Contacts

Nano Letters ◽  
2010 ◽  
Vol 10 (6) ◽  
pp. 2281-2287 ◽  
Author(s):  
Yung-Chen Lin ◽  
Yu Chen ◽  
Alexandros Shailos ◽  
Yu Huang
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Spin Polarized

Ga∕Au alloy catalyst for single crystal silicon-nanowire epitaxy

2007 ◽  
Vol 90 (2) ◽  
pp. 023109 ◽  
Author(s):  
A. Lugstein ◽  
M. Steinmair ◽  
Y. J. Hyun ◽  
E. Bertagnolli ◽  
P. Pongratz
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Alloy Catalyst

Wafer-Scale Synthesis of Single-Crystal Zigzag Silicon Nanowire Arrays with Controlled Turning Angles

Nano Letters ◽  
2010 ◽  
Vol 10 (3) ◽  
pp. 864-868 ◽  
Author(s):  
Huan Chen ◽  
Hui Wang ◽  
Xiao-Hong Zhang ◽  
Chun-Sing Lee ◽  
Shuit-Tong Lee
Keyword(s):  
Single Crystal ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Wafer Scale ◽  
Silicon Nanowire Arrays

SPIN DEPENDENCE OF PAIR TUNNELING PROPERTIES OF Bi2Sr2CaCu2O8+x INTRINSIC JOSEPHSON JUNCTIONS

2005 ◽  
Vol 19 (01n03) ◽  
pp. 199-203 ◽  
Author(s):  
DO BANG ◽  
HU-JONG LEE ◽  
MYUNG-HO BAE ◽  
WANG-HYUN PARK
Keyword(s):  
External Field ◽  
Single Crystal ◽  
Josephson Junctions ◽  
Phase Fluctuation ◽  
Superconducting Gap ◽  
Spin Dependence ◽  
Intrinsic Josephson Junctions ◽  
Pair Tunneling ◽  
Spin Polarized ◽  
Pancake Vortices

Detailed tunneling characteristics of a stack of intrinsic Josephson junctions in a Bi 2 Sr 2 CaCu 2 O 8+x single crystal were obtained both in spin-degenerate and spin-polarized bias configurations. Injection of the spin-polarized quasiparticles effectively weakened the in-plane superconducting strength and the interlayer Jospehson coupling. The superconducting gap and the Josephson critical current of the stack were, in general, further suppressed by an external field applied in parallel with the c-axis direction. Study of the spin-dependent tunneling characteristics may provide valuable information on clarifying the mechanism of high-Tc superconductivity as well as the interlayer phase fluctuation induced by the "pancake vortices" on CuO 2 layers.

High-density magnetic-vacancy inclusion in Co2MnGa single crystal probed by spin-polarized positron annihilation spectroscopy

2021 ◽  
Author(s):  
Atsumi Miyashita ◽  
M. Maekawa ◽  
Y. Shimoyama ◽  
N. Seko ◽  
Atsuo Kawasuso ◽  
...  
Keyword(s):  
Single Crystal ◽  
Positron Annihilation ◽  
Electrical Transport ◽  
Positron Annihilation Spectroscopy ◽  
Ordered Structure ◽  
Electrical Transport Properties ◽  
Weyl Semimetal ◽  
Spin Polarized ◽  
B2 Structure

Abstract Co2MnGa is a Weyl semimetal exhibiting giant anomalous Hall and Nernst effects. Using spin-polarized positron annihilation spectroscopy, we examined a Bridgman-grown Co2MnGa single crystal with a nearly perfect L21-ordered structure and a reference Co2MnAl polycrystal with a Mn-Al-disordered B2 structure. We found that a large amount of magnetic vacancies (more than 100 ppm) were included in the Co2MnGa crystal but not the Co2MnAl crystal. We discuss possible reasons for the inclusion of vacancies, the role of vacancies in the development of the ordered structure, and the electronic states associated with the vacancies. Towards the development of Co2MnGa-based devices, the manners for reducing vacancies as well as the influence of vacancies on the electrical transport properties should be considered.

Silicon Nanowire Growth at Relatively Low Processing Temperature

2004 ◽  
Vol 818 ◽  
Author(s):  
Joondong Kim ◽  
Chunhai Ji ◽  
Wayne A. Anderson
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Single Crystal Structure ◽  
Metal Catalyst ◽  
Nanowire Growth ◽  
Processing Temperature ◽  
Straight Line ◽  
Novel Method

AbstractThe Metal Induced Growth (MIG) of nanowires has the potential to alter the conventional lithographic techniques to provide an easier fabrication method in nanoelectronics. Our group has studied the MIG technique to synthesize poly-silicon and nano size structures. This work gave silicon nanowires of 20∼200 nm diameter, 3∼10νm length and single crystal structure. Until now, the growing of silicon nanowires has been understood by two models. One is an oxide- assisted mechanism and the other is a metal catalyst assisted mechanism. Both cases need higher growth temperatures above 900°C. We are now proposing the repeatable growth of silicon nanowires at a low processing temperature, 550∼600°C, which is the lowest silicon nanowire growth temperature without using a gas type silicon source (silane).This novel method to grow silicon nanowires has several advantages: (1) low processing temperature; (2) straight line growth; (3) single crystal structure and (4) repeatability. This Si nanowire growing mechanism is based on NiSi formation.

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