scholarly journals Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores

Nano Letters ◽  
2004 ◽  
Vol 4 (7) ◽  
pp. 1333-1337 ◽  
Author(s):  
Peng Chen ◽  
Toshiyuki Mitsui ◽  
Damon B. Farmer ◽  
Jene Golovchenko ◽  
Roy G. Gordon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Properties ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Fine Tune

Atomic Layer Deposition onto Thermoplastic Polymeric Nanofibrous Aerogel Templates for Tailored Surface Properties

ACS Nano ◽  
2020 ◽  
Vol 14 (7) ◽  
pp. 7999-8011 ◽  
Author(s):  
Jianwei Lu ◽  
Yi Li ◽  
Wei Song ◽  
Mark D. Losego ◽  
Rebhadevi Monikandan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Properties ◽  
Atomic Layer ◽  
Layer Deposition

Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition

2016 ◽  
Vol 45 (4) ◽  
pp. 0421001
Author(s):  
陈芳 Chen Fang ◽  
方铉 Fang Xuan ◽  
王双鹏 Wang Shuangpeng ◽  
牛守柱 Niu Shouzhu ◽  
方芳 Fang Fang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Properties ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

Nanoscale ◽  
2015 ◽  
Vol 7 (29) ◽  
pp. 12266-12283 ◽  
Author(s):  
Axel F. Palmstrom ◽  
Pralay K. Santra ◽  
Stacey F. Bent
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Properties ◽  
Barrier Layer ◽  
Light Absorption ◽  
Atomic Layer ◽  
Third Generation ◽  
Layer Formation ◽  
Layer Deposition ◽  
Third Generation Photovoltaics

This review highlights applications of atomic layer deposition for third generation photovoltaics, including light absorption, barrier layer formation and passivation.

The Surface Passivation on the Optical and Surface Properties of InP

2014 ◽  
Vol 924 ◽  
pp. 181-188
Author(s):  
Xian Gao ◽  
Zhi Peng Wei ◽  
Dan Fang ◽  
Hai Feng Zhao ◽  
Xuan Fang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Properties ◽  
Rapid Thermal Annealing ◽  
Surface State ◽  
Luminescence Property ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Strong Luminescence ◽  
Different Temperatures

We propose a novel surface passivation of InP, to obtain the strong luminescence property and completely remove the surface state. InP is passivated by (NH4)2S solution, then treated by rapid thermal annealing (RTA) at different temperatures. Compared with unannealing sample, the PL intensity is increased to 1.7 times. We adopt atomic layer deposition (ALD) of Al2O3 avoiding oxidizing gradually.

scholarly journals Room-Temperature Atomic Layer Deposition of Al2 O3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells

ChemSusChem ◽  
2016 ◽  
Vol 9 (24) ◽  
pp. 3401-3406 ◽  
Author(s):  
Malgorzata Kot ◽  
Chittaranjan Das ◽  
Zhiping Wang ◽  
Karsten Henkel ◽  
Zied Rouissi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Surface Properties ◽  
Room Temperature ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

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