Precision-Cut Crystalline Silicon Nanodots and Nanorods from Nanowires and Direct Visualization of Cross Sections and Growth Orientations of Silicon Nanowires

Nano Letters ◽  
2003 ◽  
Vol 3 (12) ◽  
pp. 1735-1737 ◽  
Author(s):  
Boon K. Teo ◽  
X. H. Sun ◽  
T. F. Hung ◽  
X. M. Meng ◽  
N. B. Wong ◽  
...  
Keyword(s):  
Cross Sections ◽  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Direct Visualization

Infrared Diagnostics of Free Charge Carriers in Silicon Nanowires

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940030 ◽  
Author(s):  
A. I. Efimova ◽  
E. A. Lipkova ◽  
K. A. Gonchar ◽  
A. A. Eliseev ◽  
V. Yu. Timoshenko
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Attenuated Total Reflection ◽  
Free Charge ◽  
Cross Sectional ◽  
Text Type ◽  
Cross Sectional Size ◽  
Potential Applications

Free charge carrier concentration in arrays of silicon nanowires (SiNWs) with cross-sectional size of the order of 100[Formula: see text]nm was quantitatively studied by means of the infrared spectroscopy in an attenuated total reflection mode. SiNWs were formed on lightly-doped [Formula: see text]-type crystalline silicon substrates by metal-assisted chemical etching followed by additional doping through thermoactivated diffusion of boron at 900–1000∘C. The latter process was found to increase the concentration of free holes in SiNWs up to [Formula: see text][Formula: see text]cm[Formula: see text]. Potential applications of highly doped SiNWs in thermoelectric energy converters and infrared plasmonic devices are discussed.

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

Self-diffusion in single crystalline silicon nanowires

2018 ◽  
Vol 123 (16) ◽  
pp. 161515 ◽  
Author(s):  
T. Südkamp ◽  
G. Hamdana ◽  
M. Descoins ◽  
D. Mangelinck ◽  
H. S. Wasisto ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Self Diffusion

Direct Synthesis of Silicon Nanowires using Silane and Molten Gallium

2002 ◽  
Vol 737 ◽  
Author(s):  
Shashank Sharma ◽  
Mahendra K. Sunkara ◽  
Elizabeth C. Dickey
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Direct Synthesis ◽  
Growth Direction ◽  
Single Crystalline ◽  
Gas Phase Chemistry ◽  
Transmission Electron ◽  
Phase Chemistry ◽  
First Time ◽  
Low Solubility

ABSTRACTWe report for the first time, bulk synthesis of single crystalline silicon nanowires using molten gallium pools and an activated vapor phase containing silane. The resulting silicon nanowires were single crystalline with <100> growth direction. Nanowires contained an unexpectedly thin, non-uniform oxide sheath determined using high-resolution Transmission Electron Microscopy (TEM). Nanowires were tens of nanometers in diameter and tens to hundreds of microns long. The use of activated gas phase chemistry containing solute of interest over molten metal pools of low-solubility eutectics such as gallium offer a viable route to generate nanowire systems containing abrupt compositional hetero-interfaces.

Surface Texturing of Crystalline Silicon Solar Cell Using Silicon Nanowires

2013 ◽  
Vol 52 (9R) ◽  
pp. 092301 ◽  
Author(s):  
Kyeom Seon Do ◽  
Min Gu Kang ◽  
Je Jun Park ◽  
Gi Hwan Kang ◽  
Jae-Min Myoung ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Nanowires ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Surface Texturing ◽  
Crystalline Silicon Solar Cell

Predicted Thermal Stresses in a Trimaterial Assembly With Application to Silicon-Based Photovoltaic Module

2013 ◽  
Vol 80 (2) ◽  
Author(s):  
E. Suhir ◽  
D. Shangguan ◽  
L. Bechou
Keyword(s):  
Cross Sections ◽  
Structural Design ◽  
Thermal Stresses ◽  
Structural Integrity ◽  
Crystalline Silicon ◽  
Photovoltaic Module ◽  
Thermally Induced ◽  
Short And Long Term ◽  
Silicon Based

Low-temperature thermally induced stresses in a trimaterial assembly subjected to the change in temperature are predicted based on an approximate structural analysis (strength-of-materials) analytical (“mathematical”) model. The addressed stresses include normal stresses acting in the cross-sections of the assembly components and determining their short- and long-term reliability, as well as the interfacial shearing and peeling stresses responsible for the adhesive and cohesive strength of the assembly. The model is applied to a preframed crystalline silicon photovoltaic module (PVM) assembly. It is concluded that the interfacial thermal stresses, and especially the peeling stresses, can be rather high, so that the structural integrity of the module could be compromised, unless appropriate design for reliability measures are taken. The developed model can be helpful in the stress analysis and physical (structural) design of the PVM and other trimaterial assemblies.

Facile morphological control of single-crystalline silicon nanowires

2012 ◽  
Vol 258 (24) ◽  
pp. 9792-9799 ◽  
Author(s):  
Shao-long Wu ◽  
Ting Zhang ◽  
Rui-ting Zheng ◽  
Guo-an Cheng
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Morphological Control ◽  
Single Crystalline

scholarly journals Electron transport in silicon nanowires having different cross-sections

2016 ◽  
Vol 7 (2) ◽  
pp. 8-25 ◽  
Author(s):  
Orazio Muscato ◽  
Tina Castiglione
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
Maximum Entropy Principle ◽  
Optical Phonons ◽  
Poisson System ◽  
Moment System ◽  
Entropy Principle ◽  
Closure Relations ◽  
The Moment

AbstractTransport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.

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