Confinement Induced Preferential Orientation of Crystals and Enhancement of Properties in Ferroelectric Polymer Nanowires

2013 ◽  
Vol 2 (6) ◽  
pp. 535-538 ◽  
Author(s):  
Yangjiang Wu ◽  
Qingzhao Gu ◽  
Guangzhu Ding ◽  
Fuqiang Tong ◽  
Zhijun Hu ◽  
...  
Small ◽  
2010 ◽  
Vol 6 (16) ◽  
pp. 1822-1826 ◽  
Author(s):  
Anatoli Serghei ◽  
Jodie L. Lutkenhaus ◽  
Daniel F. Miranda ◽  
Kathleen McEnnis ◽  
Friedrich Kremer ◽  
...  

2016 ◽  
Vol 301 (9) ◽  
pp. 1016-1025 ◽  
Author(s):  
Richard A. Whiter ◽  
Yonatan Calahorra ◽  
Canlin Ou ◽  
Sohini Kar‐Narayan

2021 ◽  
pp. 2100214
Author(s):  
Dawei Li ◽  
Shuo Sun ◽  
Kun Wang ◽  
Zahra Ahmadi ◽  
Jeffrey E. Shield ◽  
...  

2018 ◽  
Vol 6 (5) ◽  
pp. 928-934 ◽  
Author(s):  
Richard A. Whiter ◽  
Chess Boughey ◽  
Michael Smith ◽  
Sohini Kar-Narayan

2020 ◽  
Author(s):  
Elbruz Murat Baba ◽  
Jose Montero ◽  
Dmitrii Moldarev ◽  
Marcos V. Moro ◽  
Max Wolff ◽  
...  

<p>We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH<sub>2-x</sub>) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H<sub>2</sub>/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas. </p>


2021 ◽  
Author(s):  
S. S. Kulkarni ◽  
Arundhati H. Patil ◽  
U. V. Khadke

2021 ◽  
Vol 96 ◽  
pp. 107093
Author(s):  
Vera P. Pavlović ◽  
Dragana Tošić ◽  
Radovan Dojčilović ◽  
Duško Dudić ◽  
Miroslav D. Dramićanin ◽  
...  

2021 ◽  
Author(s):  
Sungjun Kim ◽  
Keun Heo ◽  
Sunghun Lee ◽  
Seunghwan Seo ◽  
Hyeongjun Kim ◽  
...  

Recently, various efforts have been made to implement synaptic characteristics with a ferroelectric field-effect transistor (FeFET), but in-depth physical analyses have not been reported thus far.


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