Multistep Crystallization Process Involving Sequential Formations of Density Fluctuations, “Intermediate Structures”, and Lamellar Crystallites: Poly(3-hydroxybutyrate) As Investigated by Time-Resolved Synchrotron SAXS and WAXD

2011 ◽  
Vol 45 (1) ◽  
pp. 313-328 ◽  
Author(s):  
Longhai Guo ◽  
Nicolas Spegazzini ◽  
Harumi Sato ◽  
Takeji Hashimoto ◽  
Hiroyasu Masunaga ◽  
...  
2008 ◽  
Vol 209 (16) ◽  
pp. 1721-1729 ◽  
Author(s):  
Huiying Wen ◽  
Shichun Jiang ◽  
Yongfeng Men ◽  
Lijia An ◽  
Zhonghua Wu ◽  
...  

1993 ◽  
Vol 07 (06) ◽  
pp. 331-353 ◽  
Author(s):  
C. CHIA ◽  
OTTO F. SANKEY ◽  
K. T. TSEN

We present a comprehensive theory for time-resolved Raman scattering from non-equilibrium electrons in direct bandgap semiconductors. Specifically, we include (1) the effects of probing with ultrashort laser pulse: (2) the effects of finite carrier collision time; (3) the effects of band structure; and (4) the effects of damping in the optical transition, in the calculations of Raman scattering cross section. Both elastic and inelastic scattering processes are taken into account in formulating the effects of carrier collision time. The effects of damping in the optical transitions have to be considered for the experimental condition of probing with above-bandgap laser excitations even if under some circumstances they do not drastically change the lineshape of the single-particle-scattering spectrum due to spin-density fluctuations.


2017 ◽  
Vol 62 ◽  
pp. 43-48 ◽  
Author(s):  
Qirong Kuang ◽  
Jinchuan Xu ◽  
Yongri Liang ◽  
Fengwei Xie ◽  
Feng Tian ◽  
...  

1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson ◽  
J.A. Roth ◽  
Y. Rytz-Froidevaux ◽  
J. Narayan

ABSTRACTThe temperature dependent competition between solid phase epitaxy and random crystallization in ion-implanted (As+, B+, F+, and BF2+) silicon films is investigated. Measurements of time-resolved reflectivity during cw laser heating show that in the As+, F+, and BF2+-implanted layers (conc 4×1020cm-3) epitaxial growth is disrupted at temperatures 1000°C. This effect is not observed in intrinsic films or in the B+-implanted layers. Correlation with results of microstructural analyses and computer simulation of the reflectivity experiment indicates that disruption of epitaxy is caused by enhancement of the random crystallization rate by arsenic and fluorine. Kinetics parameters for the enhanced crystallization process are determined; results are interpreted in terms of impurity-catalyzed nucleation during the random crystallization process.


Author(s):  
Johannes Peterleithner ◽  
Riccardo Basso ◽  
Franz Heitmeir ◽  
Jakob Woisetschläger ◽  
Raimund Schlüßler ◽  
...  

The goal of this study was to measure the Flame Transfer Function of a perfectly and a partially premixed turbulent flame by means of Laser Interferometric Vibrometry. For the first time, this technique is used to detect integral heat release fluctuations. The results were compared to classical OH*-chemiluminescence measurements. Effects of equivalence ratio waves and vortex rollup were found within those flames and were then investigated by means of time resolved planar CH*/OH*-chemiluminescence and Frequency modulated Doppler global velocimetry. This work is motivated by the difficulties chemiluminescence encounters when faced with partially premixed flames including equivalence ratio waves and flame stretching. LIV, recording the time derivative of the density fluctuations as line-of-sight data, is not affected by these flame properties.


2019 ◽  
Vol 52 (21) ◽  
pp. 8227-8237 ◽  
Author(s):  
Matthias Amann ◽  
Jakob Stensgaard Diget ◽  
Jeppe Lyngsø ◽  
Jan Skov Pedersen ◽  
Theyencheri Narayanan ◽  
...  

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