Transition of Linear to Exponential Hole Growth Modes in Thin Free-Standing Polymer Films

2004 ◽  
Vol 37 (4) ◽  
pp. 1470-1475 ◽  
Author(s):  
J. H. Xavier ◽  
Y. Pu ◽  
C. Li ◽  
M. H. Rafailovich ◽  
J. Sokolov
2015 ◽  
Vol 128 (3) ◽  
pp. 991-994 ◽  
Author(s):  
Zaifang Li ◽  
Guoqiang Ma ◽  
Ru Ge ◽  
Fei Qin ◽  
Xinyun Dong ◽  
...  

2007 ◽  
Vol 31 ◽  
pp. 17-19
Author(s):  
Zong You Yin ◽  
Xiao Hong Tang ◽  
Ji Xuan Zhang ◽  
Deny Sentosa ◽  
Jing Hua Teng ◽  
...  

Morphology and crystal-quality of InAs/In0.53Ga0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots’ growth modes, dots’ size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots’ being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.


2008 ◽  
Vol 293 (11) ◽  
pp. 872-877 ◽  
Author(s):  
Edward Bormashenko ◽  
Alex Schechter ◽  
Oleg Stanevsky ◽  
Tamir Stein ◽  
Sagi Balter ◽  
...  

2000 ◽  
Vol 62 (4) ◽  
pp. 5187-5200 ◽  
Author(s):  
J. Mattsson ◽  
J. A. Forrest ◽  
L. Börjesson

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